FQU2N60CTU [FAIRCHILD]
Low Gate Charge (Typ. 8.5 nC); 低栅极电荷（典型值8.5 NC ）
| 型号： | FQU2N60CTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Low Gate Charge (Typ. 8.5 nC) |
| 文件： | 总9页 (文件大小：742K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2013
FQD2N60C / FQU2N60C
N-Channel QFET® MOSFET
600 V, 1.9 A, 4.7 Ω
Features
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
• 1.9 A, 600 V, R
= 4.7 Ω (Max.) @ V = 10 V,
GS
DS(on)
ID = 0.95 A
•
•
•
•
Low Gate Charge (Typ. 8.5 nC)
Low Crss (Typ. 4.3 pF)
100% Avalanche Tested
RoHS Compliant
D
D
!
G
G
●
D
◀
▲
S
S
●
●
!
G
I-PAK
D-PAK
!
S
Absolute Maximum Ratings
Symbol
Parameter
FQD2N60C / FQU2N60C
Unit
V
V
Drain-Source Voltage
600
1.9
DSS
I
Drain Current
- Continuous (T = 25°C)
A
D
C
- Continuous (T = 100°C)
1.14
7.6
A
C
(Note 1)
I
Drain Current
- Pulsed
A
DM
V
E
Gate-Source Voltage
± 30
120
V
GSS
AS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
I
1.9
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
4.4
mJ
V/ns
W
AR
dv/dt
4.5
P
Power Dissipation (T = 25°C)*
2.5
D
A
Power Dissipation (T = 25°C)
44
W
C
- Derate above 25°C
Operating and Storage Temperature Range
0.35
-55 to +150
300
W/°C
°C
°C
T , T
J
STG
T
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
L
Thermal Characteristics
Symbol
Parameter
Unit
°C/W
°C/W
°C/W
FQD2N60C / FQU2N60C
R
R
R
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient, Max.
2.87
50
θJC
θJA
θJA
110
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C0
www.fairchildsemi.com
1
Package Marking and Ordering Information
Device Marking
FQD2N60C
Device
FQD2N60C
FDU2N60C
Package
D-PAK
Reel Size
Tape Width
Quantity
-
-
-
-
FDU2N60C
I-PAK
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ Max Unit
Off Characteristics
BV
Drain-Source Breakdown Voltage
V
= 0 V, I = 250 µA
600
--
--
--
--
V
DSS
GS
D
∆BV
/
Breakdown Voltage Temperature
Coefficient
I
= 250 µA, Referenced to 25°C
D
0.6
V/°C
DSS
∆T
J
I
Zero Gate Voltage Drain Current
V
V
V
V
= 600 V, V = 0 V
--
--
--
--
--
--
--
--
1
µA
µA
nA
nA
DSS
DS
DS
GS
GS
GS
= 480 V, T = 125°C
10
C
I
I
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 30 V, V = 0 V
100
-100
GSSF
DS
= -30 V, V = 0 V
GSSR
DS
On Characteristics
V
Gate Threshold Voltage
V
V
= V , I = 250 µA
2.0
--
--
4.0
4.7
V
GS(th)
DS
GS
GS
D
R
Static Drain-Source
On-Resistance
= 10 V, I = 0.95 A
3.6
Ω
DS(on)
D
g
Forward Transconductance
V
= 40 V, I = 0.95 A
(Note 4)
--
5.0
--
S
FS
DS
D
Dynamic Characteristics
C
C
C
Input Capacitance
V
= 25 V, V = 0 V,
--
--
--
180
20
235
25
pF
pF
pF
iss
DS
GS
f = 1.0 MHz
Output Capacitance
oss
rss
Reverse Transfer Capacitance
4.3
5.6
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
= 300 V, I = 2 A,
--
--
--
--
--
--
--
9
28
60
58
66
12
--
ns
ns
d(on)
DD
G
D
R
= 25 Ω
25
24
28
8.5
1.3
4.1
r
ns
d(off)
f
(Note 4, 5)
(Note 4, 5)
ns
Q
Q
Q
V
V
= 480 V, I = 2 A,
nC
nC
nC
g
DS
GS
D
= 10 V
gs
--
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
I
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
1.9
7.6
1.4
--
A
A
S
SM
V
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 1.9 A
--
V
SD
GS
S
t
= 0 V, I = 2 A,
230
1.0
ns
µC
rr
GS
F
S
dI / dt = 100 A/µs
(Note 4)
Q
Reverse Recovery Charge
--
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 56mH, I = 2A, V = 50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 2A, di/dt ≤ 200A/µs, V ≤ BV
Starting T = 25°C
J
SD
DD
DSS,
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C0
www.fairchildsemi.com
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
101
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
100
150oC
Bottom: 4.5 V
-55oC
100
25oC
-1
10
※
Notes :
1. 250µ s Pulse Test
2. TC = 25
※
Notes :
1. VDS = 40V
℃
2. 250µ s Pulse Test
-2
-1
10
10
100
101
-1
2
4
6
8
10
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
12
10
VGS = 10V
8
100
6
4
150℃
VGS = 20V
※
Notes :
1. VGS = 0V
2
25℃
2. 250µ s Pulse Test
※
Note: T = 25℃
J
-1
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
500
450
400
350
300
250
200
150
100
50
12
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = C + C
gd
C
rss = Cds
gd
VDS = 120V
10
VDS = 300V
C
iss
8
VDS = 480V
C
oss
6
4
2
※
Notes ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
※
Note: ID = 2A
6
0
10
0
100
101
-1
0
2
4
8
10
Q , Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
G
©2009 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C0
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
※
Notes :
0.9
0.8
1. V = 0 V
2. IDG=S 250 µ A
※
Notes:
0.5
0.0
1. V = 10 V
2. IDG=S 0.95 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
2.0
1.6
1.2
0.8
0.4
0.0
Operation in This Area
101
is Limited by R DS(on)
100
1 ms
10 ms
µs
100
100 ms
DC
-1
10
※
Notes :
1. TC = 25 oC
2. T = 150 oC
J
3. Single Pulse
-2
10
100
101
102
103
25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [℃]
Figure 11. Typical Drain Current Slope
vs. Gate Resistance
Figure 12. Typical Drain-Source Voltage
Slope vs. Gate Resistance
D = 0 .5
※
N otes
:
1 00
1. Z
(t) = 2.87
℃
/W M ax.
2. DθuJtCy Factor, D =t1/t2
0 .2
3. TJM - TC
=
P DM
*
Zθ JC (t)
0.1
0 .05
PDM
0 .0 2
0.0 1
1 0-1
t1
t2
s in gle p ulse
10-4
1 0-5
1 0-3
10 -2
1 0-1
10 0
1 01
t1, S quare W ave P ulse D uration [sec]
©2009 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C0
www.fairchildsemi.com
4
Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
10V
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
10V
td(on)
tr
td(off)
tf
t on
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
L
1
2
----
--------------------
BVDSS - VDD
EAS
=
LIAS
VDS
ID
2
BVDSS
IAS
RG
VDD
ID (t)
VDD
VDS (t)
DUT
10V
t p
t p
Time
©2009 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C0
www.fairchildsemi.com
5
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
VGS
--------------------------
Gate Pulse Period
D =
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
©2009 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C0
www.fairchildsemi.com
6
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
©2009 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C0
www.fairchildsemi.com
7
Mechanical Dimensions
I-PAK
Dimensions in Millimeters
©2009 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C0
www.fairchildsemi.com
8
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™
FPS™
F-PFS™
FRFET
Global Power Resource
Green Bridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Sync-Lock™
®*
®
tm
®
®
®
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
SM
TinyBoost™
TinyBuck™
TinyCalc™
®
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
®
Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™
®
TranSiC
®
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
mWSaver™
OptoHiT™
SignalWise™
SmartMax™
TriFault Detect™
TRUECURRENT *
μSerDes™
®
SMART START™
Solutions for Your Success™
®
®
SPM
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild
®
®
UHC
®
Fairchild Semiconductor
FACT Quiet Series™
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
FACT
FAST
®
®
®
OPTOLOGIC
OPTOPLANAR
SupreMOS
SyncFET™
FastvCore™
FETBench™
®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I64
©2009 Fairchild Semiconductor Corporation
FQD2N60C / FQU2N60C Rev. C0
www.fairchildsemi.com
9
相关型号：
FQU2N60TU
Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
FAIRCHILD
FQU2N80TU
Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
FAIRCHILD
FQU2N90TU
Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明