FQPF5N60 [KERSEMI]
600V N-Channel MOSFET; 600V N沟道MOSFET
| 型号： | FQPF5N60 |
| 厂家： | 
Kersemi Electronic Co., Ltd. |
| 描述： | 600V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：803K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FQPF5N60
600V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Corise Semiconductorÿs proprietary,
planar stripe, DMOS technology.
•
•
•
•
•
•
•
2.8A, 600V, R
= 2.0Ω @V = 10 V
DS(on) GS
Low gate charge ( typical 16 nC)
Low Crss ( typical 9.0 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-220F package isolation = 4.0kV (Note 6)
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
D
!
"
! "
"
G !
"
TO-220F
G D S
!
S
FQPF Series
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
FQPF5N60
600
Units
V
V
I
Drain-Source Voltage
DSS
- Continuous (T = 25°C)
Drain Current
2.8
A
D
C
- Continuous (T = 100°C)
1.77
A
C
I
(Note 1)
Drain Current
- Pulsed
11.2
A
DM
V
E
I
Gate-Source Voltage
± 30
V
GSS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
300
mJ
A
AS
2.8
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
4.0
mJ
V/ns
W
AR
dv/dt
4.5
P
Power Dissipation (T = 25°C)
40
D
C
- Derate above 25°C
Operating and Storage Temperature Range
0.32
W/°C
°C
T , T
-55 to +150
J
STG
Maximum lead temperature for soldering purposes,
T
300
°C
L
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Typ
--
Max
3.13
62.5
Units
°C/W
°C/W
R
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
θJC
θJA
--
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
V
I
= 0 V, I = 250 µA
Drain-Source Breakdown Voltage
600
--
--
--
--
V
DSS
GS
D
∆BV
Breakdown Voltage Temperature
Coefficient
DSS
J
= 250 µA, Referenced to 25°C
0.6
V/°C
D
/
I
∆T
V
V
V
V
= 600 V, V = 0 V
--
--
--
--
--
--
--
--
10
100
100
-100
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= 480 V, T = 125°C
DS
GS
GS
C
I
I
= 30 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
GSSF
DS
= -30 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
3.0
--
--
5.0
2.0
--
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
= 10 V, I = 1.4 A
1.57
3.5
D
g
= 50 V, I = 1.4 A
(Note 4)
Forward Transconductance
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
560
80
9
730
100
12
pF
pF
pF
iss
V
= 25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
13
45
35
40
16
3.5
7.8
35
100
80
90
20
--
ns
ns
d(on)
V
= 300 V, I = 5.0 A,
DD
D
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4, 5)
(Note 4, 5)
ns
Q
Q
Q
nC
nC
nC
g
V
V
= 480 V, I = 5.0 A,
DS
D
= 10 V
gs
gd
GS
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
2.8
11.2
1.4
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = 2.8 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = 5.0 A,
270
1.9
ns
µC
rr
GS
S
dI / dt = 100 A/µs
Q
(Note 4)
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 70mH, I = 2.8A, V = 50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3.
I
≤ 5.0A, di/dt ≤ 200A/µs, V ≤ BV Starting T = 25°C
SD
DD
DSS, J
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
6. Only for back side in V = 4.0kV and t = 0.3s
iso
1
10
101
V
Top :
15GVS
10 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
150℃
25℃
0
10
100
-55℃
※
Notes :
※
Notes :
μ
-1
10
1. V = 50V
DS μ
1. 250 s Pulse Test
2. TC = 25
2. 250 s Pulse Test
℃
-1
10
-1
10
0
10
1
10
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
5
4
3
2
1
0
1
10
VGS = 10V
VGS = 20V
0
10
25℃
150
℃
※
Notes :
1. V = 0V
GS μ
2. 250 s Pulse Test
※
℃
Note : T = 25
J
-1
10
0
2
4
6
8
10
12
14
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1200
1000
800
600
400
200
0
12
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
gd
Crss = C
VDS = 120V
VDS = 300V
VDS = 480V
gd
10
8
C
iss
C
oss
6
4
※Notes :
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
※
Note : ID = 5.0 A
15
0
0
3
6
9
12
18
-1
0
10
1
10
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
※
Notes:
1. V = 0 V
2. IDG=S 250
A
※
Notes :
1. V = 10 V
μ
2. IDG=S 2.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
Operation in This Area
is Limited by R DS(on)
2.5
2.0
1.5
1.0
0.5
0.0
101
100 µs
1 ms
10 ms
100 ms
100
DC
-1
10
※
Notes :
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
C
C
-2
10
100
101
102
103
25
50
75
100
125
150
℃
TC, Case Temperature [
]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
1 0 0
0 .2
※
N o te s
1 . Z θ J C(t)
2 . D u ty F a c to r, D = t1 /t2
:
℃
/W M a x.
=
3 .1 3
0 .1
3 . T J M
-
T C
=
P D
* Z θ J C(t)
M
0 .0 5
1 0 -1
0 .0 2
PDM
0 .0 1
t1
t2
s in g le p u ls e
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
VGS
10V
Same Type
as DUT
50Kꢀ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
10V
td(on)
tr
td(off)
tf
t on
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
VDD
VDS (t)
DUT
10V
t p
t p
Time
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
TO-220F
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
9.40 ±0.20
相关型号：
©2020 ICPDF网 联系我们和版权申明