FQPF60N03L [FAIRCHILD]
30V LOGIC N-Channel MOSFET; LOGIC 30V N沟道MOSFET
| 型号： | FQPF60N03L |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 30V LOGIC N-Channel MOSFET |
| 文件： | 总8页 (文件大小：655K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 2001
TM
QFET
FQPF60N03L
30V LOGIC N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as DC/DC
converters, high efficiency switching for power
management in portable and battery operated products.
•
•
•
•
•
•
•
39A, 30V, R
= 0.0135Ω @V = 10 V
DS(on) GS
Low gate charge ( typical 18.5 nC)
Low Crss ( typical 155 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
D
!
"
! "
"
!
G
"
G D
S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
FQPF60N03L
Units
V
V
I
Drain-Source Voltage
30
39
DSS
- Continuous (T = 25°C)
Drain Current
A
D
C
- Continuous (T = 100°C)
27.6
156
A
C
I
(Note 1)
Drain Current
- Pulsed
A
DM
V
E
I
Gate-Source Voltage
± 20
220
V
GSS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
AS
39
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
4.2
mJ
V/ns
W
AR
dv/dt
7.0
P
Power Dissipation (T = 25°C)
42
D
C
- Derate above 25°C
Operating and Storage Temperature Range
0.28
-55 to +175
W/°C
°C
T , T
J
STG
Maximum lead temperature for soldering purposes,
T
300
°C
L
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Typ
Max
3.54
62.5
Units
°C/W
°C/W
R
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
--
--
θJC
θJA
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
V
= 0 V, I = 250 µA
GS D
Drain-Source Breakdown Voltage
30
--
--
--
--
V
DSS
∆BV
I
= 250 µA, Referenced to
Breakdown Voltage Temperature
Coefficient
DSS
J
D
0.02
V/°C
/
I
∆T
25°C
V
V
V
V
= 30 V, V = 0 V
GS
--
--
--
--
--
--
--
--
1
µA
µA
nA
nA
DSS
DS
DS
GS
GS
Zero Gate Voltage Drain Current
= 24 V, T = 150°C
10
C
I
I
= 20 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
GSSF
DS
= -20 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
1.0
--
2.5
V
Ω
S
GS(th)
DS
GS
D
= 10 V, I = 19.5 A
R
Static Drain-Source
On-Resistance
--
--
0.011 0.0135
0.015
GS
GS
D
DS(on)
=5V,I =19.5A
0.019
D
g
= 15 V, I = 19.5 A
(Note 4)
Forward Transconductance
--
28
--
FS
DS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
875
570
155
1140
740
200
pF
pF
pF
iss
V
= 25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
17
155
10
45
320
30
160
24
--
ns
ns
d(on)
V
= 15 V, I = 30 A,
DD
D
r
R
= 25 Ω
G
ns
d(off)
f
(Note 4, 5)
(Note 4, 5)
75
ns
Q
Q
Q
18.5
7
nC
nC
nC
g
V
V
= 24 V, I = 60 A,
DS
D
= 5 V
gs
gd
GS
9.5
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
39
156
1.5
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = 39 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = 60 A,
40
35
ns
nC
rr
GS
S
dI / dt = 100 A/µs
(Note 4)
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 145µH, I = 39A, V = 15V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 60A, di/dt ≤ 300A/µs, V
≤ BV Starting T = 25°C
SD
DD
DSS, J
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
Typical Characteristics
V
Top :
10.0GVS
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
102
101
100
102
Bottom: 3.0V
101
℃
175
℃
25
※
※
Notes :
Notes :
μ
1. V = 15V
2. 250 s Pulse Test
1. 250 s Pulse Test
2. TC = 25
DS μ
℃
℃
-55
-1
10
100
101
0
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
40
30
20
10
0
102
101
100
VGS = 5V
VGS = 10V
※
Notes :
℃
175
℃
25
1. V = 0V
2. 250 s Pulse Test
GS μ
※
℃
Note : T = 25
J
0
40
80
120
160
200
240
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
V , Source-Drain voltage [V]
SD
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
3000
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
gd
Crss = C
gd
VDS = 15V
VDS = 24V
2500
2000
1500
1000
500
C
oss
※
Notes :
C
1. VGS = 0 V
2. f =1 MHz
iss
6
4
C
rss
2
※
Note : ID = 60A
30
0
0
5
10
15
20
25
35
0
10
-1
100
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
Typical Characteristics (Continued)
1.2
1.1
1.0
2.5
2.0
1.5
1.0
0.5
0.0
※
Notes :
1. VGS = 0 V
0.9
※
Notes :
μ
2. ID = 250
A
1. VGS = 10 V
2. ID = 30 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
103
102
101
100
40
30
20
10
0
Operation in This Area
is Limited by RDS(on)
1 ms
10 ms
100 ms
DC
※
Notes :
1. TC = 25 o
C
2. T = 175 o
C
J
3. Single Pulse
10-1
100
101
25
50
75
100
125
150
175
℃
TC, Case Temperature [
]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
1 0 0
0 .2
※
N o t e s
:
0 .1
℃
/W M a x.
1 . Z θ C(t )
=
3 .5 4
J
2 . D u t y Fa c t o r , D = t 1 /t 2
3 . T J
-
TC
=
P D
* Z θ C(t )
J
0 .0 5
M
M
1 0 -1
0 .0 2
PDM
0 .0 1
t1
t2
s in g le p u ls e
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
Gate Charge Test Circuit & Waveform
VGS
Same Type
50Kꢀ
as DUT
Qg
12V
200nF
5V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
5V
td(on)
tr
td(off)
tf
t on
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
VDD
VDS (t)
DUT
10V
t p
t p
Time
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
Package Dimensions
TO-220F
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
9.40 ±0.20
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
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ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
POP™
PowerTrench®
QFET™
HiSeC™
QS™
UltraFET®
VCX™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
Stealth™
FACT™
FACT Quiet Series™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H2
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