FQPF5N60C [ONSEMI]
功率 MOSFET,N 沟道,QFET®,600 V,4.5 A,2.5 Ω,TO-220F;型号: | FQPF5N60C |
厂家: | ONSEMI |
描述: | 功率 MOSFET,N 沟道,QFET®,600 V,4.5 A,2.5 Ω,TO-220F 局域网 开关 脉冲 晶体管 |
文件: | 总12页 (文件大小:1038K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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December 2013
FQP5N60C / FQPF5N60C
N-Channel QFET® MOSFET
600 V, 4.5 A, 2.5 Ω
Description
Features
•
4.5 A, 600 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V,
ID = 2.25 A
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
•
•
•
Low Gate Charge (Typ. 15 nC)
Low Crss (Typ. 6.5 pF)
100% Avalanche Tested
D
G
G
G
D
S
D
TO-220
TO-220F
S
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted.
C
Symbol
Parameter
FQP5N60C
FQPF5N60C
Unit
V
V
I
Drain-Source Voltage
600
DSS
- Continuous (T = 25°C)
Drain Current
4.5
2.6
18
4.5 *
2.6 *
18 *
A
D
C
- Continuous (T = 100°C)
A
C
I
(Note 1)
Drain Current
- Pulsed
A
DM
V
E
I
Gate-Source Voltage
± 30
210
4.5
10
V
GSS
AS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
mJ
V/ns
W
AR
dv/dt
4.5
P
Power Dissipation (T = 25°C)
100
0.8
33
D
C
- Derate above 25°C
0.26
W/°C
°C
T , T
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
-55 to +150
300
J
STG
T
°C
L
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FQP5N60C
FQPF5N60C
Unit
°C/W
°C/W
°C/W
R
R
R
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink Typ, Max.
Thermal Resistance, Junction-to-Ambient, Max.
1.25
0.5
3.79
--
θJC
θCS
62.5
62.5
θJA
©2003 Fairchild Semiconductor Corporation
FQP5N60C / FQPF5N60C Rev. C1
www.fairchildsemi.com
1
Package Marking and Ordering Information
Part Number
FQP5N60C
FQPF5N60C
Top Mark
FQP5N60C
FQPF5N60C
Package
Packing Method Reel Size
Tape Width
Quantity
TO-220
N/A
N/A
N/A
50 units
Tube
Tube
N/A
50 units
TO-220F
Electrical Characteristics
T = 25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min. Typ.
Max.
Unit
Off Characteristics
BV
V
= 0 V, I = 250 µA
GS D
Drain-Source Breakdown Voltage
600
--
--
--
--
V
DSS
∆BV
Breakdown Voltage Temperature
Coefficient
DSS
I
= 250 µA, Referenced to 25°C
0.6
V/°C
D
/ ∆T
J
I
V
V
V
V
= 600 V, V = 0 V
--
--
--
--
--
--
--
--
1
µA
µA
nA
nA
DSS
DS
GS
Zero Gate Voltage Drain Current
= 480 V, T = 125°C
10
DS
GS
GS
C
I
I
= 30 V, V = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
GSSF
DS
= -30 V, V = 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
2.0
--
--
4.0
2.5
--
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
= 10 V, I = 2.25 A
2.0
4.7
D
g
= 40 V, I = 2.25 A
Forward Transconductance
--
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
515
55
670
72
pF
pF
pF
iss
V
= 25 V, V = 0 V,
GS
DS
Output Capacitance
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
6.5
8.5
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
10
42
38
46
15
2.5
6.6
30
90
85
100
19
--
ns
ns
d(on)
V
= 300 V, I = 4.5
D
DD
r
A, R = 25 Ω
G
ns
d(off)
f
(Note 4)
(Note 4)
ns
Q
Q
Q
nC
nC
nC
V
V
= 480 V, I = 4.5 A,
D
g
DS
= 10 V
gs
gd
GS
--
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
4.5
18
1.4
--
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0 V, I = 4.5 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
SD
GS
S
= 0 V, I = 4.5 A,
300
2.2
ns
µC
rr
GS
S
dI / dt = 100 A/µs
Q
Reverse Recovery Charge
--
F
rr
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 18.9 mH, I = 4.5 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
I
3.
≤ 4.5 A, di/dt ≤ 200 A/µs , V ≤ BV
starting T = 25°C.
SD
DD
DSS,
J
4.
Essentially independent of operating temperature.
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
FQP5N60C / FQPF5N60C Rev. C1
2
ꢀ !ꢁꢂꢃꢄꢅꢆꢇꢃꢈꢃꢂꢉꢊꢈꢁꢋꢉꢁꢂꢋ
VGS
101
100
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
101
150oC
-55oC
Bottom : 4.5 V
o
100
25 C
10-1
※
Notes :
μ
※
Notes :
1. 250 s Pulse Test
1. VDS = 40V
℃
2. TC = 25
μ
2. 250 s Pulse Test
-1
10
10-2
10
2
4
6
8
10
100
101
-1
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
6
5
4
3
2
1
0
101
100
10-1
VGS = 10V
℃
150
VGS = 20V
※
Notes :
℃
25
1. VGS = 0V
μ
2. 250 s Pulse Test
※
℃
Note : TJ = 25
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
1000
800
600
400
200
0
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
C
VDS = 120V
VDS = 300V
VDS = 480V
C
iss
C
6
oss
※
4
Notes ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
※
Note : ID = 4.5A
0
0
4
8
12
16
-1
10
100
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
FQP5N60C / FQPF5N60C Rev. C1
3
(Continued)
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※Notes :
1. VGS = 0 V
2. ID = 250 μA
※
Notes :
1. VGS = 10 V
2. ID = 2.25 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Operationin This Area
is Limited by R DS(on)
Operation in This Area
is Limited by R DS(on)
10 µs
101
100 µs
1
10
100 µs
1 ms
10 ms
100 ms
1 ms
10 ms
100 ms
100
DC
0
10
DC
-1
10
-1
10
※
Notes :
1. TC = 25 o
※
Notes :
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
C
C
2. TJ = 150 o
C
C
3. Single Pulse
-2
10
-2
10
100
101
102
103
0
10
1
10
2
10
3
10
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP5N60C
Figure 9-2. Maximum Safe Operating Area
for FQPF5N60C
5
4
3
2
1
0
25
50
75
100
125
150
℃
TC, Case Temperature [
]
Figure 10. Maximum Drain Current
vs Case Temperature
©2003 Fairchild Semiconductor Corporation
FQP5N60C / FQPF5N60C Rev. C1
www.fairchildsemi.com
4
(Continued)
Typical Characteristics
1 0 0
D = 0 .5
0 .2
0 .1
※
N o te s
1 . Z θ JC(t)
2 . D u ty F a c to r, D = t1 /t2
3 . T J M T C P D Z θ JC(t)
:
℃
/W M a x .
1 0 -1
=
1 .2 5
0 .0 5
-
=
*
M
0 .0 2
0 .0 1
PDM
s in g le p u ls e
t1
1 0 -2
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-1. Transient Thermal Response Curve for FQP5N60C
D = 0 .5
1 0 0
0 .2
0 .1
※
N o te s
1 . Z θ J C(t)
2 . D u ty F a c to r, D = t1 /t2
:
0 .0 5
℃
/W M a x.
=
3 .7 9
1 0 -1
0 .0 2
0 .0 1
3 . T J M
-
T C
=
P D
* Z θ J C(t)
M
PDM
s in g le p u ls e
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a ve P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF5N60C
©2003 Fairchild Semiconductor Corporation
FQP5N60C / FQPF5N60C Rev. C1
www.fairchildsemi.com
5
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
FQP5N60C / FQPF5N60C Rev. C1
6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
FQP5N60C / FQPF5N60C Rev. C1
7
Mechanical Dimensions
Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
©2003 Fairchild Semiconductor Corporation
FQP5N60C / FQPF5N60C Rev. C1
8
www.fairchildsemi.com
Mechanical Dimensions
Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
©2003 Fairchild Semiconductor Corporation
FQP5N60C / FQPF5N60C Rev. C1
9
www.fairchildsemi.com
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intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
tm
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
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Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
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ESBC™
®
TRUECURRENT *
SerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
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SuperSOT™-3
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®
®
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®
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®
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OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
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®
®
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
10
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©2003 Fairchild Semiconductor Corporation
FQP5N60C / FQPF5N60C Rev. C1
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