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2N3906S_05 [KEC]

EPITAXIAL PLANAR PNP TRANSISTOR; 外延平面PNP晶体管
2N3906S_05
型号： 2N3906S_05
厂家： KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述：

EPITAXIAL PLANAR PNP TRANSISTOR
外延平面PNP晶体管

晶体 晶体管 局域网
文件： 总4页 (文件大小：55K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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SEMICONDUCTOR  
2N3906S  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
GENERAL PURPOSE APPLICATION.  
SWITCHING APPLICATION.  
E
L
B
L
DIM MILLIMETERS  
FEATURES  
_
+
2.93 0.20  
A
B
C
D
E
G
H
J
1.30+0.20/-0.15  
1.30 MAX  
0.45+0.15/-0.05  
2.40+0.30/-0.20  
1.90  
Low Leakage Current  
2
3
: ICEX=-50nA(Max.), IBL=-50nA(Max.)  
@VCE=-30V, VEB=-3V.  
1
0.95  
Excellent DC Current Gain Linearity.  
Low Saturation Voltage  
0.13+0.10/-0.05  
0.00 ~ 0.10  
0.55  
K
L
P
P
: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.  
Low Collector Output Capacitance  
: Cob=4.5pF(Max.) @VCB=-5V.  
Complementary to 2N3904S.  
M
N
P
0.20 MIN  
1.00+0.20/-0.10  
7
M
1. EMITTER  
2. BASE  
3. COLLECTOR  
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
-40  
UNIT  
V
SOT-23  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
-40  
V
-5  
V
-200  
-50  
mA  
mA  
mW  
IB  
Base Current  
Marking  
Lot No.  
PC *  
Tj  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature Range  
350  
150  
Type Name  
ZA  
Tstg  
-55 150  
Note : * Package Mounted On 99.5% Alumina 10  
8
0.6  
)
2005. 4. 21  
Revision No : 3  
1/4  
2N3906S  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut-off Current  
SYMBOL  
ICEX  
TEST CONDITION  
MIN.  
-
TYP. MAX. UNIT  
VCE=-30V, VEB=-3V  
VCE=-30V, VEB=-3V  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-50  
-50  
-
nA  
nA  
V
IBL  
Base Cut-off Current  
-
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
hFE(1)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
-40  
-40  
-5.0  
60  
80  
100  
60  
30  
-
IC=-10 A, IE=0  
IC=-1mA, IB=0  
*
*
-
V
-
V
IE=-10 A, IC=0  
VCE=-1V, IC=-0.1mA  
VCE=-1V, IC=-1mA  
-
hFE(2)  
-
hFE(3)  
VCE=-1V, IC=-10mA  
VCE=-1V, IC=-50mA  
VCE=-1V, IC=-100mA  
IC=-10mA, IB=-1mA  
IC=-50mA, IB=-5mA  
IC=-10mA, IB=-1mA  
IC=-50mA, IB=-5mA  
VCE=-20V, IC=-10mA, f=100MHz  
VCB=-5V, IE=0, f=1MHz  
VBE=-0.5V, IC=0, f=1MHz  
DC Current Gain  
*
300  
-
hFE(4)  
hFE(5)  
-
VCE(sat)  
VCE(sat)  
VBE(sat)  
VBE(sat)  
fT  
1
2
1
2
-0.25  
-0.4  
-0.85  
-0.95  
-
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
*
*
V
V
-
-0.65  
-
Transition Frequency  
250  
-
MHz  
pF  
Cob  
Collector Output Capacitance  
Input Capacitance  
4.5  
10  
12  
10  
400  
60  
Cib  
-
pF  
hie  
Input Impedance  
2.0  
1.0  
100  
3.0  
k
Voltage Feedback Ratio  
Small-Signal Current Gain  
Collector Output Admittance  
x10-4  
hre  
VCE=-10V, IC=-1mA, f=1kHz  
hfe  
hoe  
VCE=-5V, IC=-0.1mA,  
Noise Figure  
NF  
td  
-
-
-
-
4.0  
35  
dB  
Rg=1k , f=10Hz 15.7kHz  
V
out  
Delay Time  
10kΩ  
C
V
Total 4pF  
in  
V
=-3.0V  
0.5V  
CC  
0
r
tr  
tstg  
tf  
Rise Time  
Switching Time  
-
-
-
-
-
-
35  
225  
75  
t ,t < 1ns, Du=2%  
f
-10.6V  
300ns  
nS  
V
out  
Storage Time  
10kΩ  
V
in  
C
Total 4pF  
1N916  
or equiv.  
V
=-3.0V  
CC  
9.1V  
0
r
Fall Time  
t ,t < 1ns, Du=2%  
f
-10.9V  
20µs  
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.  
2005. 4. 21  
Revision No : 3  
2/4  
2N3906S  
IC - VCE  
hFE - IC  
-100  
-80  
-60  
-40  
1k  
COMMON EMITTER  
=-1V  
-0.8  
-0.7  
V
CE  
500  
300  
Ta=125 C  
Ta=25 C  
Ta=-55 C  
100  
50  
30  
-0.3  
-0.2  
10  
-0.1  
I
=-0.1mA  
-20  
0
B
-0.3  
-1  
-3  
-10  
-30 -100  
-300  
COMMON EMITTER  
Ta=25  
COLLECTOR CURRENT I (mA)  
C
C
0
-1  
-2  
-3  
-4  
COLLECTOR-EMITTER VOLTAGE V  
(V)  
CE  
VCE(sat) - IC  
-1  
COMMON EMITTER  
I
/I =10  
C
B
-0.5  
-0.3  
-0.1  
-0.05  
-0.03  
Ta=25 C  
Ta=-55 C  
-0.01  
-0.1  
-0.3  
-1  
-3  
-10  
-30  
-100 -300  
COLLECTOR CURRENT I (mA)  
C
I C - VBE  
-200  
-160  
-120  
-80  
-40  
0
COMMON EMITTER  
V
=-1V  
CE  
VBE(sat) - IC  
-10  
COMMON EMITTER  
/I =10  
E
I
C
-5  
-3  
Ta=-55 C  
-1  
-0.5  
-0.3  
Ta=25 C  
Ta=125 C  
-0.1  
0
-0.4  
-0.8  
-1.2  
-1.6  
-0.1  
-0.3  
-1  
-3  
-10  
-30  
-100 -300  
BASE-EMITTER VOLTAGE V  
(V)  
COLLECTOR CURRENT I (mA)  
C
BE  
2005. 4. 21  
Revision No : 3  
3/4  
2N3906S  
VCE - IB  
Cob - VCB , C - VEB  
ib  
-1.0  
-0.8  
-0.6  
-0.4  
-0.2  
0
50  
30  
f=1MHz  
Ta=25 C  
10  
C
ob  
C
5
3
ib  
COMMON  
EMITTER  
Ta=25 C  
1
0.5  
-0.001  
-0.01  
-0.1  
-1  
-10  
-0.1  
-0.3  
-1  
-3  
-10  
(V)  
-30  
BASE CURRENT I (mA)  
B
REVERSE VOLTAGE V  
V
CB  
(V)  
EB  
2005. 4. 21  
Revision No : 3  
4/4  

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