2N3906TAR [ONSEMI]
小信号 PNP 双极晶体管，TO-92;
| 型号： | 2N3906TAR |
| 厂家： | 
ONSEMI |
| 描述： | 小信号 PNP 双极晶体管，TO-92 开关 小信号双极晶体管 |
| 文件： | 总4页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N3906
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
40 Volts
625 mWatts
VOLTAGE
POWER
FEATURES
• PNP epitaxial silicon, planar design
• Collector-emitter voltage VCE = 40V
• Collector current IC = -200mA
• Pb free product are available :99% Sn above can meet RoHS
environment substance directive request
MECHANICAL DATA
Case: TO-92
Terminals: Solderable per MIL-STD-750, Method 2026
Approx Weight : 0.02grams
Marking : S2A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VCEO
VALUE
-40
UNIT
V
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Max Power Dissipation
Storage Temperature
VCBO
VEBO
I C
-40
-5.0
V
V
-200
mA
mW
OC
OC
PTOT
TSTG
TJ
625
-55 to 150
-55 to 150
Junction Temperature
THERMALCHARACTERISTICS
PARAMETER
SYMBOL
RθJA
VALUE
200
UNITS
OC / W
Thermal Resistance, Junction to Ambient
REV.0-DEC.12.2005
PAGE . 1
2N3906
ELECTRICALCHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITION
IC=1.0mA, IB=0
MIN.
-40
TYP.
-
MAX.
-
UNIT
V
Collector - Emitter Breakdown Voltage
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
Collector - Base Breakdown Voltage
Emitter - Base Breakdown Voltage
Base Cutoff Current
IC=-10uA, IE=0
-40
-
-
-
-
-
V
V
IE=10uA, IC=0
-5.0
-
VCE=-30V, VEB=-3.0V
VCE=-30V, VEB=-3.0V
-
-
-50
-50
nA
nA
Collector Cutoff Current
ICEX
IC=-0.1mA, VCE=-1.0V
IC=-1.0mA, VCE=-1.0V
IC=-10mA, VCE=-1.0V
IC=-50mA, VCE=-1.0V
IC=-100mA, VCE=-1.0V
60
80
100
60
-
-
-
-
-
-
-
DC Current Gain
hFE
300
-
-
-
30
IC=-10mA, IB=-1.0mA
IC=-50mA, IB=-5.0mA
-
-
-
-
-0.25
-0.4
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Collector-Base Capacitance
Emitter - Base Capacitance
Delay Time
VCE(SAT)
V
IC=-10mA, IB=-1.0mA
IC=-50mA, IB=-5.0mA
-0.65
-
-
-
-0.85
-0.95
VBE(SAT)
V
CCBO
VCB=-5.0V, IE=0, f=1MHZ
VCB=-0.5V, IC=0, f=1MHZ
-
-
-
-
-
-
-
-
-
-
-
-
4.5
10
pF
pF
ns
ns
ns
ns
CEBO
td
tr
ts
tf
35
VCC=-3V, VBE=-0.5V,
IC=-10mA, IB=-1mA
Rise Time
35
Storage Time
225
75
VCC=-3V,IC=-10mA
IB1=IB2=-1mA
Fall Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
3V
3V
275O
275O
< 1ns
+9.1V
< 1ns
10KO
10KO
0.5V
0
C S* < 4pF
0
CS * < 4pF
1N916
-10.9V
-10.9V
300ns
10 to 500us
Duty Cycle ~ 2.0%
Duty Cycle ~ 2.0%
Delay and Rise Time Equivalent Test Circuit
Storage and Fall Time Equivalent Test Circuit
REV.0-DEC.12.2005
PAGE . 2
2N3906
ELECTRICAL CHARACTERISTICS CURVES
1.2
1.0
0.8
0.6
0.4
0.2
0.0
300
TJ = 150° C
VCE= 1V
250
200
T = 100° C
J
T = 25° C
J
150
T = 25° C
J
T = 100° C
J
T = 150° C
J
100
50
VCE = 1V
0
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
Collector Current, IC (mA)
Collector Current, IC (mA)
Fig. 1. Typical hFE vs. Collector Current
Fig. 2. Typical VBE vs. Collector Current
1.00
1.000
IC/IB = 10
TJ = 25° C
TJ = 100°
TJ = 150°C
0.10
T = 150°
J
TJ = 25°
I /IB = 10
C
0.01
0.01
0.100
0.01
0.1
1
10
100
1000
0.1
1
10
100
Collector Current, IC (mA)
Collector Current, IC (mA)
Fig. 3. Typical VCE (sat) vs. Collector Current
Fig. 4. Typical VBE (sat) vs. Collector Current
10
CIB (EB)
COB (CB)
1
0.1
1
10
100
Reverse Voltage, VR (V)
Fig. 5. Typical Capacitances vs. Reverse Voltage
REV.0-DEC.12.2005
PAGE . 3
2N3906
TO-92 Case Outline
TO-92
LEGAL STATEMENT
Copyright PanJit International, Inc 2005
The information presented in this document is believed to be accurate and reliable. The specifications and information
herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
systems. Pan Jit does not convey any license under its patent rights or rights of others.
STAD-AUG.23.2005
PAGE . 4
相关型号：
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Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
CENTRAL
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