2N3906TA [FAIRCHILD]
PNP General Purpose Amplifier; PNP通用放大器
| 型号： | 2N3906TA |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PNP General Purpose Amplifier |
| 文件： | 总6页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2011
2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
Features
• This device is designed for general purpose amplifier and switching applications at collector currents of 10μA to 100
mA.
PZT3906
2N3906
MMBT3906
C
C
E
E
C
B
TO-92
SOT-23
B
SOT-223
Mark:2A
EBC
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Collector-Emitter Voltage
Value
Units
V
-40
-40
Collector-Base Voltage
V
Emitter-Base Voltage
-5.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
-200
mA
°C
TJ, Tstg
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta = 25°C unless otherwise noted
Max.
Symbol
Parameter
Units
2N3906
*MMBT3906
**PZT3906
Total Device Dissipation
625
5.0
350
2.8
1,000
8.0
mW
mW/°C
PD
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
83.3
200
°C/W
°C/W
357
125
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
© 2011 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. B0
www.fairchildsemi.com
1
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Max.
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
Collector-Emitter Breakdown Voltage* IC = -1.0mA, IB = 0
-40
-40
-5.0
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
IC = -10μA, IE = 0
IE = -10μA, IC = 0
V
VCE = -30V, VBE = -3.0V
VCE = -30V, VBE = -3.0V
-50
-50
nA
nA
ICEX
Collector Cutoff Current
ON CHARACTERISTICS
hFE
DC Current Gain*
IC = -0.1mA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
60
80
100
60
300
30
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
-0.25
-0.4
V
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
-0.65
250
-0.85
-0.95
V
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = -10mA, VCE = -20V,
f = 100MHz
MHz
pF
Cobo
Cibo
NF
Output Capacitance
Input Capacitance
Noise Figure
VCB = -5.0V, IE = 0,
f = 100kHz
4.5
10.0
4.0
VEB = -0.5V, IC = 0,
f = 100kHz
pF
IC = -100μA, VCE = -5.0V,
RS = 1.0kΩ,
dB
f = 10Hz to 15.7kHz
SWITCHING CHARACTERISTICS
td
tr
Delay Time
Rise Time
Storage Time
Fall Time
VCC = -3.0V, VBE = -0.5V
IC = -10mA, IB1 = -1.0mA
35
35
ns
ns
ns
ns
ts
tf
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
225
75
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Ordering Information
Part Number
2N3906BU
2N3906TA
2N3906TAR
2N3906TF
2N3906TFR
MMBT3906
PZT3906
Marking
2N3906
2N3906
2N3906
2N3906
2N3906
2A
Package
TO-92
Packing Method
BULK
Pack Qty
10000
2000
2000
2000
2000
3000
2500
TO-92
AMMO
TO-92
AMMO
TO-92
TAPE REEL
TAPE REEL
TAPE REEL
TAPE REEL
TO-92
SOT-23
SOT-223
3906
© 2011 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. B0
www.fairchildsemi.com
2
Typical Performance Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
Typical Pulsed Current Gain
vs Collector Current
0.3
0.25
0.2
250
V
= 1.0V
β = 10
CE
125 °C
200
150
100
50
0.15
0.1
25 °C
25 °C
125°C
- 40 °C
0.05
0
- 40 °C
1
10
100 200
0.1 0.2
0.5
1
2
5
10 20
50 100
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0
β = 10
1
0.8
0.6
0.4
0.2
0
- 40 °C
- 40 °C
25 °C
125 °C
25 °C
125 °C
V
= 1V
CE
1
10
100
200
0.1
1
10
25
I C - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
Common-Base Open Circuit
Input and Output Capacitance
vs Reverse Bias Voltage
100
10
V
= 25V
CB
10
8
C
obo
6
1
C
4
ibo
0.1
0.01
2
0
0.1
25
50
75
100
125
1
10
TA - AMBIE NT TEMP ERATURE ( C)
°
REVERSE BIAS VOLTAGE (V)
© 2011 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. B0
www.fairchildsemi.com
3
Typical Performance Characteristics (continued)
Noise Figure vs Frequency
Noise Figure vs Source Resistance
6
12
VCE = 5.0V
VCE = 5.0V
f = 1.0 kHz
5
4
10
8
I
= 1.0 mA
C
3
2
1
0
μA
I
= 100 R = 200Ω
6
Ω
C
S
4
I
I
= 1.0 mA, R = 200
Ω
μA
= 100
C
C
C
S
I
2
μA
= 100 R
= 2.0 kΩ
100
S
0
0.1
1
10
0.1
1
10
100
f - FREQUENCY (kHz)
(kΩ)
- SOURCE RESISTANCE
R
S
Switching Times
vs Collector Current
Turn On and Turn Off Times
vs Collector Current
500
100
500
100
t
t
s
off
I
c
t
I B1
=
t
on
f
10
t
on
VBE(OFF)= 0.5V
I
10
1
10
1
t
r
I
c
c
t
IB1= IB2
=
IB1= IB2
=
off
10
10
t
d
1
10
100
1
10
100
I
- COLLECTOR CURRENT (mA)
I
- COLLECTOR CURRENT (mA)
C
Power Dissipation vs
Ambient Temperature
1
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
© 2011 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. B0
www.fairchildsemi.com
4
Typical Performance Characteristics (continued)
Input Impedance
Voltage Feedback Ratio
10
100
V
= 10 V
CE
f = 1.0 kHz
1
10
0.1
1
0.1
0.1
1
10
1
10
I C - COLLECTOR CURRENT (mA)
I C- COLLECTOR CURRENT (mA)
Output Admittance
Current Gain
1000
500
1000
V
= 10 V
V
= 10 V
CE
CE
f = 1.0 kHz
f = 1.0 kHz
200
100
50
100
20
10
10
0.1
0.1
1
10
1
10
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
© 2011 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. B0
www.fairchildsemi.com
5
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Preliminary
No Identification Needed
Obsolete
First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I57
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
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