2SD1276 [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1276 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1276 2SD1276A
DESCRIPTION
·With TO-220Fa package
·Complement to type 2SB950 and 2SB950A
·High forward current transfer ratio hFE
·High-speed switching
APPLICATIONS
·For power amplification
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Fig.1 simplified outline (TO-220Fa) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25℃
SYMBOL
PARAMETER
CONDITIONS
Open emitter
VALUE
UNIT
2SD1276
2SD1276A
2SD1276
2SD1276A
60
VCBO
Collector-base voltage
V
80
60
VCEO
Collector-emitter voltage
Open base
V
80
VEBO
IC
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Open collector
5
V
A
A
4
ICM
8
40
TC=25℃
Ta=25℃
PC
Collector power dissipation
W
2
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tj
Tstg
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1276 2SD1276A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2SD1276
60
V
Collector-emitter
breakdown voltage
VCEO
IC=30mA , IB=0
2SD1276A
80
V
V
IC=3A IB=12mA
IC=5A IB=20mA
VCE=3V IC=3A
VCB=60V IE=0
VCB=80V IE=0
VCE=30V IB=0
VCE=40V IB=0
VEB=5V; IC=0
2
VCEsat
Collector-emitter saturation voltage
Base-emitter voltage
4
V
VBE
2.5
0.2
0.2
0.5
0.5
2
V
2SD1276
Collector cut-off current
2SD1276A
mA
mA
mA
mA
mA
ICBO
2SD1276
Collector cut-off current
2SD1276A
ICEO
IEBO
hFE-1
hFE-2
fT
Emitter cut-off current
DC current gain
IC=3A ; VCE=0.5V
IC=3A ; VCE=3V
1000
2000
DC current gain
10000
IC=0.5A;
VCE=10V;f=1MHz
Transition frequency
20
MHz
Switching times
Turn-on time
0.5
4
μs
μs
μs
ton
ts
IC=2A ;IB1=8mA
IB2=-8mA;VCC=50V
Storage time
Fall time
1
tf
ꢀ hFE-2 Classifications
Q
R
2000-5000
4000-10000
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1276 2SD1276A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
JMnic
相关型号：
2SD1276A
Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
PANASONIC
©2020 ICPDF网 联系我们和版权申明