2SD1276/2SD1276A [ETC]
2SD1276. 2SD1276A - NPN Transistor Darlington ; 2SD1276 。 2SD1276A - NPN达林顿晶体管\n
| 型号： | 2SD1276/2SD1276A |
| 厂家： | 
ETC |
| 描述： | 2SD1276. 2SD1276A - NPN Transistor Darlington
|
| 文件： | 总3页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD1276, 2SD1276A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Unit: mm
10.0±0.2
5.5±0.2
4.2±0.2
2.7±0.2
Complementary to 2SB0950 (2SB950) and 2SB0950A (2SB950A)
Features
High foward current transfer ratio hFE
■
●
φ3.1±0.1
●
High-speed switching
●
Full-pack package which can be installed to the heat sink with
one screw
1.3±0.2
1.4±0.1
Absolute Maximum Ratings (T =25˚C)
■
C
Parameter
Symbol
Ratings
Unit
0.5 +–00..12
0.8±0.1
Collector to
2SD1276
2SD1276A
2SD1276
60
VCBO
V
base voltage
Collector to
80
2.54±0.25
60
5.08±0.5
VCEO
V
1
2
3
emitter voltage 2SD1276A
Emitter to base voltage
Peak collector current
Collector current
80
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
VEBO
ICP
5
V
A
A
8
IC
4
Internal Connection
Collector power TC=25°C
40
C
E
PC
W
dissipation
Ta=25°C
2
B
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Collector cutoff
Symbol
ICBO
Conditions
min
typ
max
200
200
500
500
2
Unit
2SD1276
2SD1276A
2SD1276
2SD1276A
VCB = 60V, IE = 0
µA
current
VCB = 80V, IE = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0
Collector cutoff
current
ICEO
IEBO
VCEO
hFE1
µA
mA
V
Emitter cutoff current
Collector to emitter 2SD1276
voltage 2SD1276A
60
80
IC = 30mA, IB = 0
VCE = 3V, IC = 0.5A
VCE = 3V, IC = 3A
1000
2000
Forward current transfer ratio
*
hFE2
10000
I
C = 3A, IB = 12mA
2
4
Collector to emitter saturation voltage VCE(sat)
V
IC = 5A, IB = 20mA
VCE = 3V, IC = 3A
Base to emitter voltage
Transition frequency
Turn-on time
VBE
fT
2.5
V
MHz
µs
V
CE = 10V, IC = 0.5A, f = 1MHz
20
0.5
4
ton
tstg
tf
IC = 3A, IB1 = 12mA, IB2 = –12mA,
VCC = 50V
Storage time
µs
Fall time
1
µs
*hFE2 Rank classification
Rank
hFE2
Q
P
2000 to 5000 4000 to 10000
Note) The part numbers in the parenthesis show conventional part number.
1
Power Transistors
2SD1276, 2SD1276A
PC — Ta
IC — VCE
IC — VBE
50
10
8
10
TC=25˚C
VCE=3V
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
(1)
IB=4.0mA
40
30
20
10
0
8
6
4
2
0
3.5mA
3.0mA
2.5mA
2.0mA
25˚C
–25˚C
1.5mA
6
TC=100˚C
1.0mA
0.5mA
4
(2)
2
(3)
(4)
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
0
0.8
1.6
2.4
3.2
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
Cob — VCB
100
105
10000
IC/IB=250
VCE=3V
IE=0
f=1MHz
TC=25˚C
30
10
3000
1000
TC=100˚C
25˚C
104
103
102
10
–25˚C
25˚C
3
1
300
100
TC=100˚C
–25˚C
0.3
0.1
30
10
0.03
0.01
3
1
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
0.1
0.3
1
3
10
30
100
( )
A
( )
A
( )
Collector to base voltage VCB V
Collector current IC
Collector current IC
Area of safe operation (ASO)
Rth(t) — t
100
103
102
10
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
Non repetitive pulse
TC=25˚C
30
10
(1)
ICP
t=1ms
(2)
3
1
IC
10ms
DC
1
0.3
0.1
10–1
10–2
0.03
0.01
1
3
10
30
100 300 1000
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
V
( )
s
Collector to emitter voltage VCE
Time
t
2
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2001 MAR
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