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2SD1276A [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2SD1276A
型号： 2SD1276A
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件： 总3页 (文件大小：127K)
中文：  中文翻译
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Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1276 2SD1276A  
DESCRIPTION  
·With TO-220Fa package  
·Complement to type 2SB950/950A  
·High DC current gain  
·High-speed switching  
APPLICATIONS  
·For power amplification  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
Fig.1 simplified outline (TO-220Fa) and symbol  
3
Absolute maximum ratings (Ta=25℃)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
2SD1276  
2SD1276A  
2SD1276  
2SD1276A  
60  
VCBO  
Collector-base voltage  
Open emitter  
V
80  
60  
VCEO  
Collector-emitter voltage  
Open base  
V
80  
VEBO  
IC  
Emitter-base voltage  
Collector current (DC)  
Collector current-Peak  
Open collector  
5
V
A
A
4
ICM  
8
40  
TC=25℃  
Ta=25℃  
PC  
Collector power dissipation  
W
2
Junction temperature  
Storage temperature  
150  
-55~150  
℃
℃
Tj  
Tstg  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1276 2SD1276A  
CHARACTERISTICS  
Tj=25℃ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
60  
TYP.  
MAX  
UNIT  
2SD1276  
Collector-emitter  
breakdown voltage  
V(BR)CEO  
IC=30mA , IB=0  
V
2SD1276A  
80  
VCEsat-1  
VCEsat-  
VBE  
Collector-emitter saturation voltage  
Collector-emitter saturation voltage  
Base-emitter voltage  
IC=3A ;IB=12mA  
IC=5A ;IB=20mA  
VCE=3V; IC=3A  
VCB=60V ;IE=0  
2
4
V
V
V
2.5  
2SD1276  
Collector  
ICBO  
0.2  
mA  
cut-off current  
2SD1276A  
VCB=80V; IE=0  
2SD1276  
Collector  
VCE=30V; IB=0  
ICEO  
0.5  
2
mA  
mA  
cut-off current  
2SD1276A  
VCE=40V; IB=0  
IEBO  
hFE-1  
hFE-2  
fT  
Emitter cut-off current  
DC current gain  
VEB=5V; IC=0  
IC=3A ; VCE=0.5V  
IC=3A ; VCE=3V  
IC=0.5A; VCE=10V;f=1MHz  
1000  
2000  
DC current gain  
10000  
Transition frequency  
20  
MHz  
Switching times  
Turn-on time  
0.5  
4
μs  
μs  
μs  
ton  
ts  
IC=2A ;IB1=8mA  
IB2=-8mA;VCC=50V  
Storage time  
Fall time  
1
tf  
‹ hFE-2 Classifications  
Q
R
2000-5000  
4000-10000  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1276 2SD1276A  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)  
3

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