2SC3855_2014 [JMNIC]
Silicon Power Transistors;
| 型号： | 2SC3855_2014 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon Power Transistors |
| 文件： | 总3页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon Power Transistors
2SC3855
DESCRIPTION
·With TO-3PN package
·Complement to type 2SA1491
APPLICATIONS
·Audio and general purpose
PINNING
PIN
DESCRIPTION
1
Base
Collector;connected to
mounting base
2
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
Open emitter
VALUE
UNIT
VCBO
Collector-base voltage
200
V
VCEO
VEBO
IC
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
140
6
V
V
Open collector
10
A
IB
Base current
4
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
100
150
-55~150
W
℃
℃
Tj
Tstg
JMnic
Product Specification
Silicon
www.jmnic.com
Power
Transistors
2SC3855
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
IC=5A IB=0.5A
VCB=200V IE=0
VEB=6V; IC=0
140
V
VCEsat
ICBO
IEBO
hFE
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
2.0
100
100
V
μA
μA
IC=3A ; VCE=4V
IC=0.5A ; VCE=12V
50
fT
Transition frequency
20
MHz
Switching times
ton Turn-on time
ts
0.30
2.40
0.40
μs
μs
μs
IC=5A;RL=12Ω
IB1=- IB2=0.5A
Storage time
Fall time
VCC=60V
tf
JMnic
Product Specification
www.jmnic.com
Silicon Power Transistors
2SC3855
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
JMnic
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