2SA1803 [JMNIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SA1803 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总4页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1803
DESCRIPTION
·
·With TO-3PFM package
·Complement to type 2SC4688
APPLICATIONS
·Power amplifier applications
·Recommend for 40W high fidelity audio
frequency amplifier output stage
PINNING (see Fig.2 )
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3PFM) and symbol
3
Absolute maximum ratings(Tc=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
-80
UNIT
V
Open emitter
Open base
-80
V
Open collector
-5
V
-6
A
ICM
Collector current-peak
Base current
-12
A
IB
-0.6
55
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
W
℃
℃
Tj
150
-55~150
Tstg
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1803
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBE
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
CONDITIONS
IC=-50mA; IB=0
MIN
TYP.
MAX
UNIT
V
-80
IC=-5A;IB=-0.5 A
IC=-3A ; VCE=-5V
VCB=-80V; IE=0
-2.0
-1.5
-5
V
V
ICBO
Collector cut-off current
Emitter cut-off current
DC current gain
μA
μA
IEBO
VEB=-5V; IC=0
-5
hFE-1
hFE-2
fT
IC=-1A ; VCE=-5V
IC=-3A ; VCE=-5V
IC=-1A ; VCE=-5V
IE=0; VCB=-10V;f=1MHz
55
35
160
DC current gain
Transition frequency
30
MHz
pF
COB
Output capacitance
290
hFE-1 classifications
R
O
55-110
80-160
2
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1803
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1803
4
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