2SA1804 [ISC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SA1804 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总5页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1804
DESCRIPTION
·
·With TO-3PML package
·Complement to type 2SC4689
APPLICATIONS
·Power amplifier applications
·Recommend for 55W high fidelity audio
frequency amplifier output stage
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
-120
-120
-5
UNIT
V
Open emitter
Open base
V
Open collector
V
-8
A
ICM
Collector current-peak
Base current
-16
A
IB
-0.8
70
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
W
℃
℃
Tj
150
Tstg
-55~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1804
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCE(sat)
VBE
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=-50mA; IB=0
-120
IC=-6A;IB=-0.6 A
IC=-4A ; VCE=-5V
VCB=-120V; IE=0
VEB=-5V; IC=0
-2.0
-1.5
-5
V
V
ICBO
Collector cut-off current
Emitter cut-off current
DC current gain
μA
μA
IEBO
-5
hFE-1
IC=-1A ; VCE=-5V
IC=-4A ; VCE=-5V
IC=-1A ; VCE=-5V
IE=0; VCB=10V;f=1MHz
55
35
160
hFE-2
DC current gain
fT
Transition frequency
30
MHz
pF
COB
Output capacitance
420
hFE classifications
R
O
55-110
80-160
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1804
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1804
4
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1804
5
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