2SA1803-R [TOSHIBA]

TRANSISTOR 6 A, 80 V, PNP, Si, POWER TRANSISTOR, 2-16F1A, 3 PIN, BIP General Purpose Power;
2SA1803-R
型号: 2SA1803-R
厂家: TOSHIBA    TOSHIBA
描述:

TRANSISTOR 6 A, 80 V, PNP, Si, POWER TRANSISTOR, 2-16F1A, 3 PIN, BIP General Purpose Power

局域网 放大器 晶体管
文件: 总4页 (文件大小:120K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SA1803  
TOSHIBA Transistor Silicon PNP Triple Diffused Type  
2SA1803  
Power Amplifier Applications  
Unit: mm  
Complementary to 2SC4688  
Recommended for 40-W high-fidelity audio frequency amplifier  
output stage  
Maximum Ratings  
(Tc = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
V
CBO  
V
CEO  
V
EBO  
80  
80  
5  
V
V
V
DC  
I
6  
C
Collector current  
A
A
Pulse  
I
12  
0.6  
CP  
Base current  
I
B
Collector power dissipation  
(Tc = 25°C)  
JEDEC  
JEITA  
P
55  
W
C
Junction temperature  
Storage temperature range  
T
150  
°C  
°C  
j
TOSHIBA  
2-16F1A  
T
stg  
55 to 150  
Weight: 5.8 g (typ.)  
Electrical Characteristics  
(Tc = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 80 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
I
V
V
5.0  
5.0  
µA  
µA  
V
CBO  
CB  
E
Emitter cut-off current  
= 5 V, I = 0  
C
EBO  
EB  
Collector-emitter breakdown voltage  
V
I
C
= 50 mA, I = 0  
80  
(BR) CEO  
B
h
FE (1)  
V
CE  
= 5 V, I = 1 A  
55  
160  
C
DC current gain  
(Note)  
h
V
= 5 V, I = 3 A  
35  
80  
1.0  
0.95  
30  
2.0  
1.5  
FE (2)  
CE  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
C
= 5 A, I = 0.5 A  
V
V
CE (sat)  
B
V
BE  
V
CE  
V
CE  
V
CB  
= 5 V, I = 3 A  
C
Transition frequency  
f
= 5 V, I = 1 A  
MHz  
pF  
T
C
Collector output capacitance  
C
ob  
= 10 V, I = 0, f = 1 MHz  
290  
E
Note: h  
FE (1)  
classification R: 55 to 110, O: 80 to 160  
1
2004-07-07  
2SA1803  
Marking  
A1803  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
Characteristics  
indicator  
2
2004-07-07  
2SA1803  
I
– V  
I – V  
C BE  
C
CE  
7  
6  
5  
4  
3  
2  
1  
0
6  
5  
4  
3  
2  
1  
0
Common emitter  
Tc = 25°C  
Common emitter  
= 5 V  
500 200 100  
V
CE  
70  
50  
Tc = 100°C  
25  
30  
20  
25  
I
B
= 10 mA  
0
0
2  
4  
6  
8  
10  
12  
14  
(V)  
16  
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2  
Base-emitter voltage (V)  
Collector-emitter voltage  
V
V
BE  
CE  
h
FE  
– I  
C
V
– I  
CE (sat) C  
1000  
3  
1  
Common emitter  
Common emitter  
500  
300  
V
= 5 V  
I
C
/I = 10  
B
CE  
Tc = 100°C  
25  
0.5  
0.3  
100  
25  
Tc = 100°C  
50  
30  
25  
0.1  
25  
0.05  
0.03  
10  
5
0.01  
0.03  
0.1  
0.3  
1  
3  
10  
Collector current  
I
(A)  
0.01  
0.03  
0.1  
0.3  
1  
3  
10  
C
Collector current  
I
C
(A)  
Safe Operating Area  
20  
10  
I
max (pulsed)*  
C
1 ms*  
f
– I  
C
T
I
C
max (continuous)  
200  
100  
100 ms*  
5  
3  
10 ms*  
Common emitter  
= 5 V  
V
CE  
Tc = 25°C  
DC operation  
(Tc = 25°C)  
50  
30  
1  
10  
0.5  
0.3  
*: Single nonrepetitive pulse  
Tc = 25°C  
5
3
Curves must be derated linearly  
with increase in temperature.  
V
CEO  
max  
1
0.1  
1  
0.01  
0.03  
0.1  
0.3  
1  
3  
10  
3  
10  
30  
100 200  
(V)  
Collector current  
I
(A)  
Collector-emitter voltage  
V
CE  
C
3
2004-07-07  
2SA1803  
RESTRICTIONS ON PRODUCT USE  
030619EAA  
The information contained herein is subject to change without notice.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
4
2004-07-07  

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