2N6250 [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N6250 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N6249 2N6250 2N6251
DESCRIPTION
·With TO-3 package
·High voltage
·Low saturation voltage
·Fast switching capability
APPLICATIONS
·For high voltage inverters ,switching regulators
and line operated amplifier applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
300
375
450
200
275
350
6
UNIT
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
VCBO
Collector-base voltage
Open emitter
V
VCEO
Collector-emitter voltage
Open base
V
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Open collector
V
A
10
Collector current-peak
Base current
30
A
10
A
PT
Tj
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
175
150
-65~200
W
℃
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance from junction to case
MAX
UNIT
Rth j-c
1.0
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N6249 2N6250 2N6251
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
2N6249
2N6250
2N6251
200
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=200mA ; IB=0
V
V
275
350
IC=10A;IB=1.0A
IC=10A;IB=1.25 A
IC=10A;IB=1.67 A
IC=10A;IB=1.0A
IC=10A;IB=1.25 A
IC=10A;IB=1.67 A
Collector-emitter
saturation voltage
VCE(sat)
1.5
Base-emitter saturation
voltage
VBE(sat)
2.25
V
V
CE=RatedVCEV;VBE=-1.5V
5.0
10
ICEV
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
mA
mA
mA
TC=125℃
2N6249
2N6250
2N6251
VCE=150V;IB=0
ICEO
5.0
VCE=225V;IB=0
VCE=300V;IB=0
VEB=6V; IC=0
IEBO
1.0
50
50
50
2N6249
2N6250
2N6251
10
8
hFE
IC=10A ; VCE=3V
6
fT
Transition frequency
IC=1A ; VCE=10V
2.5
5.8
MHz
A
Second breakdown collector current
With base forward biased
VCE=30V,t=1.0s,
Nonrepetitive
Is/b
Switching times
For 2N6249
IC=10A; IB1=-IB2=1.0A;VCC=200V
tr
Rise time
2.0
3.5
μs
μs
For 2N6250
IC=10A;IB1=-IB2=1.25A;VCC=200V
ts
Storage time
Fall time
tf
1.0
μs
For 2N6251
IC=10A;IB1=-IB2=1.67A;VCC=200V
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N6249 2N6250 2N6251
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
JMnic
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