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2N5885 [JMNIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2N5885
型号： 2N5885
厂家： QUANZHOU JINMEI ELECTRONIC CO.,LTD.    QUANZHOU JINMEI ELECTRONIC CO.,LTD.
描述：

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管 局域网
文件： 总3页 (文件大小：44K)
中文：  中文翻译
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Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors  
2N5885 2N5886  
DESCRIPTION  
·With TO-3 package  
·Complement to type 2N5883 2N5884  
APPLICATIONS  
·They are intended for use in power linear  
and switching applications  
PINNING  
PIN  
DESCRIPTION  
1
Base  
2
3
Emitter  
Collector  
Fig.1 simplified outline (TO-3) and symbol  
Absolute maximum ratings(Ta=℃)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
60  
UNIT  
2N5885  
2N5886  
2N5885  
2N5886  
VCBO  
Collector-base voltage  
Open emitter  
V
80  
60  
Collector-emitter  
voltage  
VCEO  
Open base  
V
80  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
5
V
A
25  
Collector current-peak  
Base current  
50  
A
7.5  
A
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25℃  
200  
200  
-65~200  
W
℃
℃
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
0.875  
℃/W  
JMnic  
Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors  
2N5885 2N5886  
CHARACTERISTICS  
Tj=25℃ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
TYP.  
MAX  
UNIT  
2N5885  
2N5886  
60  
Collector-emitter  
sustaining voltage  
VCEO(sus)  
IC=0.2A ;IB=0  
V
80  
VCEsat-1  
VCEsat-2  
VBEsat  
VBE  
Collector-emitter saturation voltage  
Collector-emitter saturation voltage  
Collector-emitter saturation voltage  
Base-emitter on voltage  
IC=15A; IB=1.5A  
IC=25A; IB=6.25A  
IC=25A; IB=6.25A  
IC=10A ; VCE=4V  
VCB=ratedVCBO; IB=0  
VCE=30V; IB=0  
1
4
V
V
2.5  
1.5  
1
V
V
ICBO  
Collector cut-off current  
mA  
2N5885  
Collector cut-off current  
2N5886  
ICEO  
2
mA  
VCE=40V; IB=0  
VCE=ratedVCEO  
CE=ratedVCEO; TC=150℃  
VEB=5V; IC=0  
;
1
10  
1
mA  
mA  
mA  
Collector cut-off current  
(VBE(off)=1.5V)  
ICEV  
V
IEBO  
hFE-1  
hFE-2  
hFE-3  
fT  
Emitter cut-off current  
DC current gain  
IC=3A ; VCE=4V  
35  
20  
4
DC current gain  
IC=10A ; VCE=4V  
100  
DC current gain  
IC=25A ; VCE=4V  
Trainsistion frequency  
IC=1A ; VCE=10V;f=1MHz  
4
MHz  
Switching times  
tr  
ts  
tf  
Rise time  
0.7  
1.0  
0.8  
μs  
μs  
μs  
IC=10A ;IB1=- IB2=1A  
VCC=30V  
Storage time  
Fall time  
JMnic  
Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors  
2N5885 2N5886  
PACKAGE OUTLINE  
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)  
JMnic  

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