KTC3195Y [JCST]
Transistor;
| 型号： | KTC3195Y |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：291K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
KTC3195 TRANSISTOR (NPN)
TO-92S
FEATURES
z
Small reverse transfer capacitance
Low noise Figure
1. EMITTER
z
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
40
Unit
V
30
V
4
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
20
mA
mW
℃
PC
400
150
-55-150
TJ
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
40
30
4
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
V(BR)CBO IC=100μA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=100μA, IC=0
V
V
ICBO
IEBO
hFE
fT
VCB=40V, IE=0
VEB=4V, IC=0
0.5
0.5
200
μA
μA
VCE=6V, IC=1mA
VCE=6V, IC=1mA
40
Transition frequency
300
550
0.7
2.5
18
MHz
pF
Reverse Transfer capacitance
Noise figure
Cre
NF
Gpe
VCB=6V, IE=0, f=1MHz
5
dB
VCE=6V, IC=1mA,f=100MHZ
Power Gain
dB
CLASSIFICATION OF hFE
Rank
R
O
Y
40-80
70-140
100-200
Range
A,Jun,2011
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