KTC3198 [TGS]
TO-92 Plastic-Encapsulate Transistors (NPN); TO- 92塑封装晶体管（ NPN ）
| 型号： | KTC3198 |
| 厂家： | 
Tiger Electronic Co.,Ltd |
| 描述： | TO-92 Plastic-Encapsulate Transistors (NPN) |
| 文件： | 总1页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
KTC3198 TRANSISTOR (NPN)
1.EMITTER
2.COLLECTOR
3.BASE
FEATURES
z
z
General Purpose Switching Application
Complementary to KTA1266.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbo
VCBO
VCEO
VEBO
IC
Parameter
Value
60
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
50
V
5
V
Collector Current
0.15
0.625
200
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
W
RθJA
Tj
℃/W
℃
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR) CEO
V(BR)EBO
ICBO
Test
conditions
Min
60
50
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= 0.1mA ,IE=0
IC=5mA,IB=0
V
IE=0.1mA,IC=0
V
VCB=60V,IE=0
0.1
0.1
700
μA
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
hFE(1)
VCE=6V, IC=2mA
VCE=6V, IC=150mA
IC=100mA,IB=10mA
IC=100mA,IB=10mA
VCE=10V,IC=1mA
VCB=10V, IE=0, f=1MHz
70
25
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
0.25
1
V
V
80
MHz
pF
Collector Output Capacitance
Cob
3.5
CLASSIFICATION OF hFE(1)
RANK
O
Y
GR
BL
300-700
RANGE
70-140
120-240
200-400
A,Dec,2010
相关型号：
KTC3198-BP
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3
MCC
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