KTC3198-O [KEXIN]
NPN Transistors;
| 型号： | KTC3198-O |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总3页 (文件大小：1767K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIP Type
Transistors
NPN Transistors
KTC3198
Unit:mm
3.8 ± 0.3
TO-92
4.8 ± 0.3
■ Features
● Excellent hFE Linearity
● Low Noise
0.60 Max
0.45 ± 0.1
● Complementary to KTA1266
0.5
2
1
3
1.Emitter
2.Collector
3.Base
1.27
2.54
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
60
Unit
V
VCBO
VCEO
VEBO
50
5
Collector Current - Continuous
Base Current
I
C
150
mA
mW
℃
I
B
50
Collector Power Dissipation
Junction Temperature
P
C
625
T
J
150
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
60
50
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100uA， I
Ic= 1 mA，I =0
= 100uA， I = 0
CB= 60 V , I = 0
EB= 5V , I =0
E= 0
B
I
E
C
I
CBO
EBO
V
V
E
0.1
0.1
0.25
1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
I
I
C
=100mA, I
B
=10mA
=10mA
V
C
=100mA, I
B
V
V
V
V
V
V
CE= 6V, I
CE= 6V, I
C
=2mA
70
25
700
DC current gain
hFE
C=150mA
Base intrinsic resistance
Noise Figure
rbb'
NF
CB= 10V, I
C= -1mA,f=30MHz
50
Ω
dB
CE= 6V, I = 0.1mA,Rg=10KΩ,f=3MHz
C
10
Collector output capacitance
Transition frequency
C
ob
T
CB= 10V, I
CE= 10V, I
E
= 0,f=1MHz
= -1mA
3.5
pF
f
E
80
MHz
■ Classification of hfe(1)
Type
KTC3198-O
KTC3198-Y
120-240
KTC3198-GR
200-400
KTC3198-BL
300-700
Range
70-140
1
www.kexin.com.cn
DIP Type
Transistors
NPN Transistors
KTC3198
■ Typical Characterisitics
2
www.kexin.com.cn
SMD Type
Transistors
NPN Transistors
KTC3198
■ Typical Characterisitics
3
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相关型号：
KTC3198GR-BP
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3
MCC
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