KTC3198 [SECOS]

General Purpose Transistor; 通用晶体管
KTC3198
型号: KTC3198
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

General Purpose Transistor
通用晶体管

晶体 晶体管
文件: 总2页 (文件大小:250K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
KTC3198  
0.15A , 60V  
NPN Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
FEATURE  
TO-92  
V(BR)CBO=60V  
CLASSIFICATION OF hFE (1)  
KTC3198-O  
KTC3198-Y KTC3198-GR  
120~240 200~400  
Product-Rank  
70~140  
Range  
1Emitter  
2Base  
3Collector  
Collector  
3
Millimeter  
Millimeter  
2
REF.  
REF.  
Min.  
4.40  
4.30  
12.70  
3.30  
0.36  
Max.  
Min.  
Max.  
Base  
A
B
C
D
E
4.70  
4.70  
-
3.81  
0.56  
F
G
H
J
0.30  
0.51  
1.27 TYP.  
1.10  
2.42  
0.36  
1.40  
2.66  
0.76  
1
Emitter  
K
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
Ratings  
Unit  
mA  
mW  
°C  
Collector Current  
ICM  
150  
Power Dissipation  
PCM  
625  
Junction, Storage Temperature  
TJ, TSTG  
125, -55~125  
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Min.  
60  
50  
5
Typ. Max.  
Unit  
V
Test condition  
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage  
Emitter to Base Breakdown Voltage  
Collector Cut-Off Current  
-
-
-
-
-
-
-
IC=100µA, IE=0  
IC=5mA, IB=0  
V
-
V
IE=100µA, IC=0  
VCB=60V, IE=0  
-
0.1  
0.1  
400  
µA  
µA  
Emitter Cut-Off Current  
IEBO  
-
VEB=5V, IC=0  
70  
25  
-
VCE=6V, IC=2mA  
VCE=6V, IC=150mA  
IC=100mA, IB=10mA  
IC=100mA, IB=10mA  
DC Current Gain  
hFE  
100  
Collector to Emitter Saturation Voltage  
Base to Emitter Saturation Voltage  
Transition Frequency  
VCE(sat)  
VBE(sat)  
fT  
0.1  
0.25  
V
V
-
-
-
1
-
80  
MHz VCE=10V, IC=1mA, f=30MHz  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
10-Nov-2011 Rev.B  
Page 1 of 2  
KTC3198  
0.15A , 60V  
NPN Plastic Encapsulated Transistor  
Elektronische Bauelemente  
CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
10-Nov-2011 Rev.B  
Page 2 of 2  

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