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2SD1802R(TO-251) [JCST]

Transistor;
2SD1802R(TO-251)
型号： 2SD1802R(TO-251)
厂家： JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
描述：

Transistor
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中文：  中文翻译
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-251 Plastic-Encapsulate Transistors  
TO-251  
2SD1802 TRANSISTOR (NPN)  
FEATURES  
z
z
z
z
Adoption of FBET,MBIT Processes  
1.BASE  
1
Large Current Capacity and Wide ASO  
Low Collector-to-Emitter Saturation Voltage  
Fast Switching Speed  
2
3
2.COLLECTOR  
3.EMITTER  
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
Collector Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
60  
V
50  
V
6
V
Collector Current –Continuous  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
3
1
A
PC  
W
℃
℃
TJ  
150  
Tstg  
-55-150  
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
Min  
60  
50  
6
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO  
IC =10µA, IE=0  
V(BR)CEO IC =1mA, IB=0  
V
V(BR)EBO  
ICBO  
V
IE=10µA, IC =0  
VCB=40V, IE=0  
VEB=4V, IC=0  
1
1
µA  
µA  
Emitter cut-off current  
IEBO  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(sat)  
fT  
VCE=2V, IC=100mA  
VCE=2V, IC=3A  
100  
35  
560  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
IC=2A, IB=100mA  
IC=2A, IB=100mA  
VCE=10V, IC=50mA  
VCB=10V, IE=0, f=1MHz  
0.5  
1.2  
V
V
150  
25  
MHz  
pF  
Collector output capacitance  
Cob  
CLASSIFICATION OF hFE(1)  
R
S
T
U
Rank  
100-200  
140-280  
200-400  
280-560  
Range  
A,Jun,2011  
Typical Characteristics  
2SD1802  
hFE ——  
IC  
Static Characteristic  
600  
500  
400  
300  
200  
100  
0
1000  
100  
10  
COMMON  
EMITTER  
Ta=25℃  
COMMON EMITTER  
VCE=2V  
3mA  
2.7mA  
2.4mA  
Ta=100℃  
Ta=25℃  
2.1mA  
1.8mA  
1.5mA  
1.2mA  
0.9mA  
0.6mA  
IB=0.3mA  
0
10  
0
2
4
6
8
10  
12  
1
10  
100  
1000  
3000  
COLLECTOR-EMITTER VOLTAGE VCE (V)  
COLLECTOR CURRENT IC (mA)  
VBEsat ——  
VCEsat —— IC  
IC  
1000  
100  
10  
1200  
900  
β=20  
β=20  
Ta=25℃  
600  
Ta=100℃  
Ta=100℃  
Ta=25℃  
300  
3000  
100  
1000  
3000  
1200  
150  
10  
100  
1000  
COLLECTOR CURRENT IC (mA)  
COLLECTOR CURRENT IC (mA)  
IC —— VBE  
Cob/ Cib —— VCB/ VEB  
1000  
3000  
1000  
f=1MHz  
IE=0/ IC=0  
Ta=25℃  
Cib  
100  
10  
1
100  
Cob  
COMMON  
EMITTER  
VCE=2V  
10  
0.1  
300  
600  
900  
1
10  
20  
REVERSE VOLTAGE  
V
(V)  
BASE-EMITTER VOLTAGE VBE (V)  
PC —— Ta  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
0
25  
50  
75  
100  
125  
AMBIENT TEMPERATURE Ta (℃)  
A,Jun,2011  

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