2SD1802R(TO-252) [JCST]
Transistor;型号: | 2SD1802R(TO-252) |
厂家: | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
描述: | Transistor |
文件: | 总2页 (文件大小:379K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252 Plastic-Encapsulate Transistors
TO-252
2SD1802 TRANSISTOR (NPN)
FEATURES
1.BASE
z
z
z
z
Adoption of FBET,MBIT Processes
2.COLLECTOR
3.EMITTER
Large Current Capacity and Wide ASO
Low Collector-to-Emitter Saturation Voltage
Fast Switching Speed
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
60
V
50
V
6
V
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
3
1
A
PC
W
℃
℃
TJ
150
Tstg
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
60
50
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
IC =10µA, IE=0
V(BR)CEO IC =1mA, IB=0
V
V(BR)EBO
ICBO
V
IE=10µA, IC =0
VCB=40V, IE=0
VEB=4V, IC=0
1
1
µA
µA
Emitter cut-off current
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
VCE=2V, IC=100mA
VCE=2V, IC=3A
100
35
560
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
IC=2A, IB=100mA
IC=2A, IB=100mA
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
0.5
1.2
V
V
150
25
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE(1)
R
S
T
U
Rank
100-200
140-280
200-400
280-560
Range
A,Jun,2011
Typical Characteristics
2SD1802
hFE ——
IC
Static Characteristic
500
400
300
200
100
0
1000
100
10
COMMON
EMITTER
Ta=25℃
COMMON EMITTER
VCE=2V
3.0mA
2.7mA
2.4mA
2.1mA
Ta=100℃
Ta=25℃
1.8mA
1.5mA
1.2mA
0.9mA
0.6mA
IB=0.3mA
0
10
0
2
4
6
8
10
12
1
10
100
1000
3000
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (mA)
VBEsat ——
VCEsat —— IC
IC
1000
100
10
1200
900
β=20
β=20
Ta=25℃
Ta=100℃
600
Ta=100℃
Ta=25℃
300
3000
100
1000
3000
1200
150
10
100
1000
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
IC —— VBE
Cob/ Cib —— VCB/ VEB
1000
3000
1000
f=1MHz
IE=0/ IC=0
Ta=25℃
Cib
100
10
1
100
Cob
COMMON
EMITTER
VCE=2V
10
0.1
300
600
900
1
10
20
REVERSE VOLTAGE
V
(V)
BASE-EMITTER VOLTAGE VBE (V)
PC —— Ta
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
AMBIENT TEMPERATURE Ta (℃)
A,Jun,2011
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ONSEMI
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