2SD1802S(TO251) [UTC]
Transistor;
| 型号： | 2SD1802S(TO251) |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：299K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC2SD1802 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
HIGH CURRENT SWITCHING
APPLICATION
DESCRIPTION
The UTC 2SD1802 applies to voltage regulators, relay
drivers, lamp drivers, and electrical equipment.
1
FEATURES
*Adoption of FBET, MBIT processes
*Large current capacity and wide ASO
*Low collector-to-emitter saturation voltage
*Fast switching speed
TO-251
1: BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
Pc
VALUE
UNIT
V
V
Collector-Base Voltage
60
50
6
1
15
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation
Tc=25°C
V
W
W
A
A
°C
°C
Collector Current(DC)
Collector Current(PULSE)
Junction Temperature
Storage Temperature
Ic
Icp
Tj
3
6
150
TSTG
-55 ~ +150
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (note)
SYMBOL
ICBO
TEST CONDITIONS
VCB=40V,IE=0
MIN TYP MAX UNIT
1
1
µA
µA
IEBO
VEB=4V,IC=0
VCE=2V, Ic=100mA
hFE1
hFE2
100
35
560
VCE=2V, Ic=3A
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-on Time
fT
Cob
VCE=10V,IC=50mA
VCB=10V,f=1MHz
IC=2A,IB=100mA
IC=2A,IB=100mA
IC=10µA,IE=0
IC=1mA,RBE=∞
IE=10µA,IC=0
See test circuit
See test circuit
See test circuit
150
25
0.19
0.94
MHz
pF
V
V
V
V
V
ns
ns
ns
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
0.5
1.2
60
50
6
70
650
35
Storage Time
Fall Time
tstg
tf
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R213-003,A
UTC2SD1802 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
CLASSIFICATION OF hFE1
RANK
R
S
T
U
RANGE
100-200
140-280
200-400
280-560
TEST CIRCUIT (Unit : resistance : Ω, capacitance : F)
2
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R213-003,A
UTC2SD1802 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
3
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R213-003,A
UTC2SD1802 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
4
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R213-003,A
相关型号：
2SD1802TTP
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TP, 3 PIN
ONSEMI
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