DTC114TUA [JCST]
Digital transistors (built-in resistors); 数字晶体管（内置电阻）
| 型号： | DTC114TUA |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Digital transistors (built-in resistors) |
| 文件： | 总2页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital transistors (built-in resistors)
DTC114TE/DTC114TUA
DTC114TKA/DTC114TCA /DTC114TSA
DIGITAL TRANSISTOR (NPN)
FEATURES
∙ Built-in bias resistors enable the configuration of an
inverter circuit without connecting extemal input resistors.
∙ The bias resistors conisit of thin-film resistors with
complete isolation to without connecting extemal input.
They also have the advantage of almost completely
Eliminating parasitic effects.
∙ Only the on/off conditions need to be set for operation,
marking device design easy.
PIN CONNENCTIONS AND MARKING
DTC114TE
DTC114TUA
(1) Base
(1)Base
(2) Emitter
(3) Collector
(2)Emitter
(3)Collector
SOT-323
Addreviated symbol: 04
Addreviated symbol: 04
SOT-523
DTC114TKA
DTC114TCA
(1) Base
(1) Base
(2) Emitter
(3) Collector
(2) Emitter
(3) Collector
SOT-23
Addreviated symbol: 04
SOT-23-3L
Addreviated symbol:04
DTC114TSA
(1) Emitter
(2) Collector
(3) Base
TO-92S
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
LIMITS(DTC114T□)
Units
E
UA
KA
50
CA
SA
VCBO
VCEO
VEBO
IC
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
50
5
V
Collector Current -Continuous
Collector Dissipation
100
mA
mW
℃
PC
150
200
300
Junction temperature
Tj
150
-55~+150
TJ, Tstg
Junction and Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
Ic=50µA,IE=0
Ic=1mA,IB=0
conditions
MIN
50
50
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
V
IE=50µA,IC=0
VCB=50V,IE=0
VEB=4V,IC=0
0.5
0.5
600
0.3
uA
uA
IEBO
DC current gain
hFE
100
7
300
VCE=5V,IC=1mA
IC=10mA,IB=1mA
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
V
250
10
MHz
kΩ
VCE=10V,IE=-5mA, f=100MHz
Imput resistor
R1
13
Typical Characteristics
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