DTC114TUAT106 [ROHM]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, UMT3, SC-70, 3 PIN;型号: | DTC114TUAT106 |
厂家: | ROHM |
描述: | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, UMT3, SC-70, 3 PIN 开关 光电二极管 晶体管 |
文件: | 总10页 (文件大小:1448K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DTC114T series
Datasheet
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
llOutline
Parameter
Value
50V
VMT3
EMT3F
V
CEO
I
100mA
C
ꢀ
ꢀ
R
10kΩ
1
DTC114TM
(SC-105AA)
DTC114TEB
(SC-89)
ꢀ
ꢀ
EMT3
UMT3F
llFeatures
1) Built-In Biasing Resistor
ꢀ
ꢀ
2) Built-in bias resistors enable the configuration of
ꢀan inverter circuit without connecting external
ꢀinput resistors (see inner circuit) .
DTC114TE
SOT-416(SC-75A)
DTC114TUB
(SC-85)
UMT3
SMT3
3) The bias resistors consist of thin-film resistors
ꢀwith complete isolation to allow negative biasing
ꢀof the input. They also have the advantage of
ꢀcompletely eliminating parasitic effects.
4) Only the on/off conditions need to be set
ꢀfor operation, making the circuit design easy.
5) Complementary PNP Types: DTA114T series
6) Complex transistors: UMH8N/ IMH8A/ EMG4/
ꢀUMG4N/ FMG4A (PNP type)
ꢀ
ꢀ
DTC114TUA
SOT-323(SC-70)
DTC114TKA
SOT-346(SC-59)
llInner circuit
7) Lead Free/RoHS Compliant.
B: BASE
llApplication
C: COLLECTOR
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
E: EMITTER
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
llPackaging specifications
Basic
ordering
Package
size
Taping
Reel size Tape width
Part No.
DTC114TM
Package
Marking
code
(mm)
(mm)
unit.(pcs)
VMT3
EMT3F
EMT3
UMT3F
UMT3
SMT3
1212
1616
1616
2021
2021
2928
T2L
TL
180
180
180
180
180
180
8
8
8
8
8
8
8000
04
04
04
04
04
04
DTC114TEB
DTC114TE
3000
TL
3000
DTC114TUB
DTC114TUA
DTC114TKA
TL
3000
T106
T146
3000
3000
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
1/9
20121023 - Rev.001
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DTC114T series
Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Values
50
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
50
V
5
V
100
mA
DTC114TM
150
DTC114TEB
150
DTC114TE
Power dissipation
150
*1
PD
mW
DTC114TUB
200
DTC114TUA
DTC114TKA
200
200
Tj
Junction temperature
150
℃
℃
Tstg
Range of storage temperature
-55 to +150
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
50
Typ.
Max.
-
Collector-base breakdown
voltage
BVCBO
BVCEO
I = 50μA
-
V
V
C
Collector-emitter breakdown
voltage
I = 1mA
50
-
-
C
BVEBO
ICBO
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
I = 50μA
5
-
-
-
V
μA
μA
V
E
V
CB
= 50V
-
0.5
0.5
0.3
600
13
IEBO
V = 4V
EB
-
-
-
I / I = 10mA / 1mA
VCE(sat)
hFE
-
C
B
V
CE
= 5V, I = 1mA
100
7
250
10
-
C
R1
Input resistance
-
kΩ
V
= 10V, I = -5mA,
CE
E
*2
fT
Transition frequency
-
250
-
MHz
f = 100MHz
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
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2/9
20121023 - Rev.001
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DTC114T series
Datasheet
llElectrical characteristic curves(Ta=25℃)
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics
Fig.3 DC Current gain vs. Collector Current
Fig.4 Collector-emitter saturation voltage vs.
Collector Current
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© 2012 ROHMCo., Ltd. All rights reserved.
3/9
20121023 - Rev.001
DTC114T series
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Datasheet
llDimensions
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© 2012 ROHMCo., Ltd. All rights reserved.
4/9
20121023 - Rev.001
DTC114T series
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Datasheet
llDimensions
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5/9
20121023 - Rev.001
DTC114T series
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Datasheet
llDimensions
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
6/9
20121023 - Rev.001
DTC114T series
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Datasheet
llDimensions
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
7/9
20121023 - Rev.001
DTC114T series
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Datasheet
llDimensions
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© 2012 ROHMCo., Ltd. All rights reserved.
8/9
20121023 - Rev.001
DTC114T series
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Datasheet
llDimensions
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9/9
20121023 - Rev.001
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