DTC114TUAP [MCC]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN;
| 型号： | DTC114TUAP |
| 厂家： | 
Micro Commercial Components |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：805K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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DTC114TUA
Features
•
Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors (see equivalent circuit)
The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input. They also have the
advantage of almost completely eliminating parasitic effects
Only the on/off conditions need to be set for operation, making
device design easy
NPN Digital Transistor
•
•
SOT-323
A
Absolute Maximum Ratings
D
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
50
50
5
100
Unit
V
V
V
mA
3
1: Base
2: Emitter
3: Collector
C
B
1
2
Collector Current-Continuous
F
E
Collector Dissipation
PC
200
mW
℃
℃
Junction Temperature
TJ
150
Storage Temperature Range
TSTG
-55~150
H
G
J
K
DIMENSIONS
Electrical Characteristics
INCHES
MAX
MM
Sym
Parameter
Min
50
Typ
Max Unit
DIM
A
B
C
D
E
MIN
.071
.045
.079
MIN
1.80
1.15
2.00
MAX
2.20
1.35
2.20
NOTE
.087
.053
.087
Collector-Base Breakdown Voltage
(IC=50uA, IE=0)
V(BR)CBO
---
---
---
---
---
V
Collector-Emitter Breakdown Voltage
(IC=1mA, IB=0)
.026 Nominal
0.65Nominal
1.20
V(BR)CEO
V(BR)EBO
ICBO
50
5
---
V
.047
.012
.000
.035
.004
.012
.055
.016
.004
.039
.010
.016
1.40
.40
.100
1.00
.250
.40
Emitter-Base Breakdown Voltage
(IE=50uA, IC=0)
F
.30
.000
.90
.100
.30
---
V
G
H
J
Collector Cut-off Current
(VCB=50V, IE=0)
---
0.5
uA
K
Emitter Cut-off Current
(VEB=4V, IC=0)
IEBO
---
---
0.5
uA
---
Suggested Solder
Pad Layout
0.70
DC Current Gain
hFE
100
300
600
(VCE=5V, IC=1mA)
Collector-Emitter Saturation Voltage
VCE(sat)
R1
---
7
---
10
0.3
13
---
V
(IC=10mA, IB=1mA)
0.90
Input Resistor
KΩ
MHz
Transition Frequency
fT
---
250
(VCE=10V, IC=-5mA, f=100MHz)
1.90
0.65
0.65
www.mccsemi.com
Revision: 1
2005/06/29
DTC114TUA
M C C
www.mccsemi.com
Revision: 1
2005/06/29
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