A1015LT1-SOT-23 [JCST]
TRANSISTOR（ PNP ）; 晶体管（ PNP ）
| 型号： | A1015LT1-SOT-23 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | TRANSISTOR（ PNP ） |
| 文件： | 总2页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
SOT— 23
1. BASE
A1015LT1
TRANSISTOR（ PNP ）
2. EMITTER
3. COLLECTOR
FEATURES
Power dissipation
PCM
Collector current
ICM
:
0.2
-0.15
W（Tamb=25℃）
2.4
1.3
:
A
V
Collector-base voltage
V(BR)CBO : -50
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150
Unit : mm
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless otherwise specified）
Parameter
Symbol
Test
conditions
MIN
-50
-50
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
Ic= -100μA， IE=0
Ic= -0.1mA， IB=0
IE= -10μA， IC=0
(BR)CBO
V
V
(BR)CEO
V(BR)EBO
V
ICBO
ICEO
VCB=-50 V , IE=0
-0.1
-0.1
-0.1
400
-0.3
-1.1
μA
μA
μA
Collector cut-off current
VCE= -50 V , IB=0
VEB=- 5V , IC=0
Emitter cut-off current
IEBO
DC current gain
HFE(1)
VCE=-6V, IC= -2mA
IC=-100 mA, IB= -10mA
IC=-100 mA, IB= -10mA
130
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
V
V
VCE=-10V, I = -1mA
C
Transition frequency
fT
80
MHz
f=30MHz
CLASSIFICATION OF H
FE(1)
Rank
L
H
Range
130-200
200-400
MARKING
BA
SOT-23 PACKAGE OUTLINE DIMENSIONS
D
b
0.2
e
C
e1
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min
Max
Min
Max
A
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.100
0.100
1.000
0.500
0.150
3.000
1.400
2.550
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.043
0.004
0.039
0.020
0.006
0.118
0.055
0.100
A1
A2
b
c
D
E
E1
e
0.950TPY
0.550REF
0.037TPY
0.022REF
e1
L
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
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