A1015LT1H [JCST]
Transistor;
| 型号： | A1015LT1H |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
A1015LT1 TRANSISTOR (PNP)
SOT-23
1. BASE
FEATURES
2. EMITTER
3. COLLECTOR
Power dissipation
PCM:
0.2
W (Tamb=25℃)
2. 4
1. 3
Collector current
ICM:
-0.15
-50
A
V
Collector-base voltage
V(BR)CBO:
Operating and storage junction temperature range
Unit: mm
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic= -100µA, IE=0
Ic= -0.1mA, IB=0
MIN
-50
-50
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
IE= -10µA, IC=0
V
VCB=-50V , IE=0
-0.1
-0.1
-0.1
400
-0.3
-1.1
µA
µA
µA
ICEO
VCE= -50V , IB=0
Collector cut-off current
IEBO
VEB=- 5V , IC=0
Emitter cut-off current
HFE(1)
VCE=-6V, IC= -2mA
IC=-100 mA, IB= -10mA
IC=-100 mA, IB= -10mA
130
DC current gain
VCE(sat)
VBE(sat)
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE=-10V, IC= -1mA
80
MHz
Transition frequency
fT
f=30MHz
CLASSIFICATION OF HFE(1)
Rank
L
130-200
H
Range
200-400
MARKING
BA
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