A1015O(TO-92) [JCST]
Transistor;
| 型号： | A1015O(TO-92) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A1015 TRANSISTOR (PNP)
TO-92
1.EMITTER
2.COLLECTOR
3.BASE
FEATURES
z
Power dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-50
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
-50
V
-5
V
-150
400
mA
mW
PD
Tj
125
℃
℃
Tstg
-55-125
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC= -100μA, IE=0
IC= -0. 1mA, IB=0
IE= -100μA, IC=0
VCB= -50V,IE=0
-50
-50
-5
V
V
V
-0.1
-0.1
-0.1
400
-0.3
-1.1
μA
μA
μA
Collector cut-off current
ICEO
VCE= -50V, IB=0
Emitter cut-off current
IEBO
VEB= -5V, IC=0
DC current gain
hFE
VCE= -6V, IC= -2mA
IC= -100mA, IB= -10mA
IC= -100mA, IB= -10mA
70
80
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
V
V
VCE= -10 V, IC= -1mA
f =30MHz
Transition frequency
Collector Output Capacitance
Noise Figure
fT
MHz
pF
Cob
NF
VCB=-10V,IE=0,f=1MHZ
7
6
VCE= -6 V, IC= -0.1mA,
f =1KHz,RG=10K
dB
CLASSIFICATION OF hFE
Rank
O
Y
GR
200-400
Range
70-140
120-240
A,May,2011
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