3DD13005N96A [JCST]
Transistor;
| 型号： | 3DD13005N96A |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13005N96 TRANSISTOR (NPN)
TO-220
FEATURES
z
z
z
z
Power switching applications
Good high temperature
Low saturation voltage
High speed switching
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
700
Unit
V
400
V
11
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
4
A
PC
1.5
W
Tj
150
℃
℃
Tstg
Storage Temperature
-55~150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC= 1mA,IE=0
Min
700
400
11
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=10mA,IB=0
V
IE=1mA,IC=0
V
VCB=700V,IE=0
VCE=400V,IB=0
VEB=7V,IC=0
100
100
100
40
μA
μA
μA
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
hFE(1)
VCE=5V, IC=1A
VCE=5V, IC=10mA
VCE=5V, IC=2A
IC=1A,IB=0.2A
10
5
DC current gain
hFE(2)
hFE(3)
8
40
0.3
0.8
1.6
5
VCE(sat)1
VCE(sat)2
VBE(sat)
tS
V
V
Collector-emitter saturation voltage
IC=4A,IB=1A
Base-emitter saturation voltage
Storage time
IC=2A,IB=0.5A
V
IC=250mA (UI9600)
VCE=10V, IC=0.5A,f=1MHz
2.5
5
μs
MHz
Transition frequency
fT
CLASSIFICATION OF hFE(1)
Range
10-15
15-20
20-25
25-30
30-35
35-40
CLASSIFICATION OF tS
Rank
A
B1
3-3.5(μs )
B2
3.5-4 (μs )
C1
4-4.5 (μs )
C2
Range
2.5-3(μs )
4.5-5 (μs )
A,Jun,2011
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