3DD13007 [TRSYS]
Plastic-Encapsulated Transistors; 塑料封装晶体管
| 型号： | 3DD13007 |
| 厂家： | 
TRANSYS Electronics Limited |
| 描述： | Plastic-Encapsulated Transistors |
| 文件： | 总1页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transys
Electronics
L
I M I T E D
TO-220 Plastic-Encapsulated Transistors
3DD13007 TRANSISTOR (NPN)
TO-220
FEATURES
Power dissipation
PCM:
2
W (Tamb=25℃)
1. BASE
Collector current
ICM:
2. COLLECTOR
3. EMITTER
8
A
V
Collector-base voltage
V(BR)CBO:
2 3
700
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic= 1mA, IE=0
Ic= 10mA, IB=0
IE= 1mA, IC=0
VCB= 700V, IE=0
VEB=9V, IC=0
MIN
700
400
9
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
1
100
40
30
1
mA
µA
Emitter cut-off current
IEBO
hFE(1)
VCE= 5V, IC= 2 A
VCE=5 V, IC=5A
IC=2A,IB=0.4A
IC=2A, IB= 0.4A
8
5
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
V
V
1.2
Ic=500mA,VCE=10V
f=1MHZ
4
MHZ
pF
µs
Collector output capacitance
Fall time
VCE=10,IE=0, f=0.1MHz
80
Cob
tf
0.7
3
Vcc=125V, Ic=5A
IB1=-IB2=1A
Storage time
ts
µs
CLASSIFICATION OF hFE(1)
Rank
Range
8-15
15-20
20-25
25-30
30-35
35-40
相关型号：
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