3DD13007 [GOOD-ARK]
TRANSISTOR; 晶体管
| 型号： | 3DD13007 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | TRANSISTOR |
| 文件： | 总3页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13007
TRANSISTOR（ NPN ）
TO— 220
FEATURES
Power dissipation
PCM
:
2
W（Tamb=25℃）
Collector current
ICM:
1.BASE
8
A
2.COLLECTOR
3.EMITTER
Collector-base voltage
V(BR)CBO : 700 V
1 2 3
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless otherwise specified）
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
700
400
9
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Ic= 1mA，IE=0
Ic= 10mA，IB=0
IE= 1mA，IC=0
VCB= 700V， IE=0
VEB= 9 V， IC=0
VCE= 5V, IC= 2 A
VCE=5 V, IC=5A
IC=2A,IB=0.4A
V
V
1
100
40
30
1
mA
µA
Emitter cut-off current
IEBO
hFE（1）
hFE（2）
VCE(sat)
VBE(sat)
fT
8
5
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
V
IC=2A, IB= 0.4A
1.2
Ic=500mA,VCE=10V
f=1MHZ
4
MHZ
Collector output capacitance
Fall time
VCE=10,IE=0，f=0.1MHz
80
Cob
pF
tf
0.7
3
µs
Vcc=125V, Ic=5A
IB1=-IB2=1A
Storage time
ts
µs
CLASSIFICATION OF hFE(1)
Rank
Range
8-15
15-20
20-25
25-30
30-35
35-40
TO-220-3L PACKAGE OUTLINE DIMENSIONS
A
D
C1
φ
b1
b
A1
e
C
e1
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min
Max
Min
Max
4.470
2.520
0.710
1.170
0.310
1.710
10.010
8.500
12.060
4.670
2.820
0.910
1.370
0.530
1.370
10.310
8.900
12.460
1.176
0.099
0.028
0.046
0.012
0.046
0.394
0.335
0.475
0.184
0.111
0.036
0.054
0.021
0.054
0.406
0.350
0.491
A
A1
b
b1
c
c1
D
E
E1
e
0.100TYP
2.540TYP
4.980
2.590
13.400
3.560
3.790
5.180
2.890
13.800
3.960
3.890
0.196
0.102
0.528
0.140
0.149
0.204
0.114
0.543
0.156
0.153
e1
F
L
L1
φ
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