2SC3052-SOT-23 [JCST]

TRANSISTOR (NPN); 晶体管( NPN )
2SC3052-SOT-23
型号: 2SC3052-SOT-23
厂家: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
描述:

TRANSISTOR (NPN)
晶体管( NPN )

晶体 晶体管
文件: 总1页 (文件大小:80K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
SOT-23 Plastic-Encapsulate Transistors  
SOT-23  
1. BASE  
2SC3052 TRANSISTOR (NPN)  
2. EMITTER  
3. COLLECTOR  
FEATURES  
Power dissipation  
PCM:  
2. 4  
1. 3  
0.15  
W (Tamb=25)  
Collector current  
ICM:  
0.2  
50  
A
V
Collector-base voltage  
V (BR) CBO  
:
Unit: mm  
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V (BR) CBO  
V (BR) CEO  
V (BR) EBO  
ICBO  
Test conditions  
IC = 100 µA, IE=0  
IC = 100 µA, IB=0  
IE= 100 µA, IC=0  
VCB= 50 V , IE=0  
MIN  
50  
50  
6
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
0.1  
0.1  
800  
µA  
µA  
Emitter cut-off current  
IEBO  
VEB= 6V , IC=0  
hFE(1)  
VCE= 6V, IC= 1mA  
VCE= 6V, IC= 0.1mA  
IC=100mA, IB= 10mA  
150  
50  
DC current gain  
hFE(2)  
Collector-emitter saturation voltage  
VCE (sat)  
VBE (sat)  
0.3  
1
V
Base-emitter saturation voltage  
Transition frequency  
IC= 100mA, IB= 10mA  
VCE= 6V, IC= 10mA  
V
180  
MHz  
pF  
fT  
Collector output capacitance  
Noise figure  
VCE=6V, IE=0, f=1MHz  
Cob  
NF  
4
VCE=6V,IE=-0.1mA, f=1KHz, RG=2K  
15  
dB  
CLASSIFICATION OF hFE(1)  
Rank  
E
150~300  
LE  
F
250~500  
LF  
G
Range  
Marking  
400~800  
LG  

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