2SC3052-SOT-23 [JCST]
TRANSISTOR (NPN); 晶体管( NPN )型号: | 2SC3052-SOT-23 |
厂家: | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
描述: | TRANSISTOR (NPN) |
文件: | 总1页 (文件大小:80K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
1. BASE
2SC3052 TRANSISTOR (NPN)
2. EMITTER
3. COLLECTOR
FEATURES
Power dissipation
PCM:
2. 4
1. 3
0.15
W (Tamb=25℃)
Collector current
ICM:
0.2
50
A
V
Collector-base voltage
V (BR) CBO
:
Unit: mm
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V (BR) CBO
V (BR) CEO
V (BR) EBO
ICBO
Test conditions
IC = 100 µA, IE=0
IC = 100 µA, IB=0
IE= 100 µA, IC=0
VCB= 50 V , IE=0
MIN
50
50
6
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
0.1
0.1
800
µA
µA
Emitter cut-off current
IEBO
VEB= 6V , IC=0
hFE(1)
VCE= 6V, IC= 1mA
VCE= 6V, IC= 0.1mA
IC=100mA, IB= 10mA
150
50
DC current gain
hFE(2)
Collector-emitter saturation voltage
VCE (sat)
VBE (sat)
0.3
1
V
Base-emitter saturation voltage
Transition frequency
IC= 100mA, IB= 10mA
VCE= 6V, IC= 10mA
V
180
MHz
pF
fT
Collector output capacitance
Noise figure
VCE=6V, IE=0, f=1MHz
Cob
NF
4
VCE=6V,IE=-0.1mA, f=1KHz, RG=2KΩ
15
dB
CLASSIFICATION OF hFE(1)
Rank
E
150~300
LE
F
250~500
LF
G
Range
Marking
400~800
LG
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