2SC3052G [JCST]
Transistor;
| 型号： | 2SC3052G |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor 放大器 光电二极管 晶体管 |
| 文件： | 总1页 (文件大小：675K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
2SC3052 TRANSISTOR (NPN)
FEATURES
1. BASE
2. EMITTER
3. COLLECTOR
z
z
Low collector to emitter saturation voltage
VCE(sat)=0.3V max(@IC=100mA,IB=10mA)
Excellent linearity of DC forward current gain
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
50
Unit
V
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
50
V
6
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
0.2
A
PC
150
125
-55-125
mW
TJ
℃
℃
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V (BR) CBO
V (BR) CEO
V (BR) EBO
ICBO
50
50
6
V
V
IC = 100 μA, IE=0
IC = 100 μA, IB=0
IE= 100 μA, IC=0
V
VCB= 50 V , IE=0
0.1
0.1
μA
μA
Emitter cut-off current
IEBO
VEB= 6V , IC=0
hFE(1)
VCE= 6V, IC= 1mA
VCE= 6V, IC= 0.1mA
IC=100mA, IB= 10mA
IC= 100mA, IB= 10mA
150
50
800
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE (sat)
VBE (sat)
fT
0.3
1
V
V
V
CE= 6V, IC= 10mA
180
MHz
pF
dB
Collector output capacitance
Noise figure
VCE=6V, IE=0, f=1MHz
Cob
4
VCE=6V,IE=-0.1mA, f=1KHz, RG=2KΩ
NF
15
CLASSIFICATION OF hFE(1)
Rank
E
150~300
LE
F
250~500
LF
G
Range
Marking
400~800
LG
A,May,2011
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