2SC3052-SOT-23-3L [JCST]
TRANSISTOR (NPN); 晶体管（ NPN ）
| 型号： | 2SC3052-SOT-23-3L |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总1页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate Transistors
2SC3052
TRANSISTOR (NPN)
SOT-23-3L
1. BASE
FEATURES
2. EMITTER
3. COLLECTOR
Power dissipation
PCM:
0.15
W (Tamb=25℃)
2. 80¡ À0. 05
1. 60¡ À0. 05
Collector current
ICM:
0.2
50
A
V
Collector-base voltage
V(BR)CBO
:
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic=100µA, IE=0
Ic= 100µA, IB=0
IE=100µA, IC=0
VCB=50 V , IE=0
VEB= 6V , IC=0
MIN
50
50
6
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
0.1
0.1
800
µA
µA
IEBO
Emitter cut-off current
hFE(1)
VCE=6V, IC=1mA
VCE=6V, IC=0.1mA
IC=100 mA, IB=10mA
150
50
DC current gain
hFE(2)
VCE(sat)
0.3
1
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB=10mA
VCE=6V, IC= 10mA
180
MHz
Transition frequency
fT
CLASSIFICATION OF hFE
(1)
Marking
LE
LF
LG
400-800
Range
150-300
250-500
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