VUI30-12N1 [IXYS]
Rectifier Module for Three Phase Power Factor Correction; 整流模块三相功率因数校正
| 型号： | VUI30-12N1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Rectifier Module for Three Phase Power Factor Correction |
| 文件： | 总2页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advanced Technical Information
VUI 30-12 N1
Rectifier Module for
Three Phase Power Factor Correction
Typical Rectified Mains Power
Pn = 15 kW
at Vn = 400 V 3~; fT = 15 kHz; TC = 80°C
Features
Transistor T
• NPT IGBT with low saturation voltage
• fast recovery epitaxial diodes (FRED)
• module package:
Symbol
VCES
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
V
V
- high level of integration
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
- large creepage and strike distances
±
VGES
20
IC25
IC80
TC = 25°C
TC = 80°C
95
65
A
A
±
ICM
VCEK
VGE = 15 V; R = 22 Ω; TVJ = 125°C
100
VCES
A
Applications
RBSOA; L = 1G00 µH
Three phase rectifier with power factor
correction, set up as follows:
±
tSC
VCE = VCES; VGE = 15 V; RG = 22 Ω; TVJ = 125°C
10
µs
(SCSOA)
non-repetitive
• input from three phase mains
- wide range of input voltage
- mains currents approximately sinusoidal
in phase with mains voltage
- topology permits to control overcurrent
such as in case of input voltage peaks
• output
- direct current link
- buck type converter - reduced output
voltage
Symbol
VCE(sat)
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
IC = 20 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
1.7
1.9
2.0
V
V
VGE(th)
ICES
IC = 2 mA; VGE = VCE
4.5
6.5
V
- possibility to supply boost converter,
inverter etc.
• required components
- one power semiconductor module per
phase
- one inductor and one capacitor per
phase on mains side
- output inductor, depending on supplied
circuit
VCE = VCES;VGE = 0 V; TVJ = 25°C
TVJ = 125°C
1.6 mA
mA
1.8
±
IGES
VCE = 0 V; VGE
=
20 V
400 nA
td(on)
tr
td(off)
tf
Eon
Eoff
100
70
500
70
3.0
2.2
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 20 A
±
VGE = 15 V; RG = 22 Ω
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE= 600 V; VGE = 15 V; IC = 50 A
3.3
240
nF
nC
RthJC
RthJH
0.3 K/W
K/W
with heatsink transfer paste
0.6
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
1 - 2
IXYS Semiconductor GmbH
IXYS Corporation
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
Advanced Technical Information
VUI 30-12 N1
Diodes D1 - D4
Symbol
VRRM
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
V
IF25
IF80
TC = 25°C
TC = 80°C
40
25
A
A
Symbol
Conditions
Characteristic Values
min. typ. max.
VF
IR
IF = 20 A; TVJ = 25°C
TVJ = 125°C
2.2
1.9
2.4
V
V
VR = VRRM
;
TVJ = 25°C
0.75 mA
mA
VR = 0.8VRRM; TVJ = 125°C
2
IRM
trr
IF = 30A; di /dt = -250 A/µs; TVJ = 125°C
VR = 540 VF
16
400
A
ns
RthJC
RthJH
1.3 K/W
K/W
with heat transfer paste
2.6
Module
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
-40...+150
-40...+125
°C
°C
VISOL
Md
I
ISOL ≤ 1 mA; 50/60 Hz; t = 1 min
3600
V~
Mounting torque (M5)
2 - 2.5
Nm
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
dA, dS
5
mm
g
Weight
35
Dimensions in mm (1 mm = 0.0394")
© 2001 IXYS All rights reserved
IXYS Semiconductor GmbH
2 - 2
IXYS Corporation
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
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