VUI9-06N7 [LITTELFUSE]
Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel,;型号: | VUI9-06N7 |
厂家: | LITTELFUSE |
描述: | Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, 局域网 栅 功率控制 晶体管 |
文件: | 总3页 (文件大小:133K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VUI 9-06N7
VRRM = 1200 V
IFAV25 = 15 A
Rectifier Module for
Power Factor Correction
VCES = 600 V
IC25 = 37 A
Fast Single Phase Rectifier
Ultra Fast Boost Chopper
Preliminary data sheet
J
A
B
N
E
Typical Rectified Mains Power
D 11
D 13
D 14
D 1
Pn = 900 W at Vn = 110 V
H
Pn = 2100 W at Vn = 240 V
D 12
7
T
at VDC = 400 V, fT = 75 kHz, TC = 80°C
G
G
Pin configuration see outlines
Application
Input Rectifier Bridge D11 - D14
• single phase rectification with power
factor correction (PFC)
• low harmonic content of mains current
• mains current and voltage in phase
• wide input voltage range, controlled
output voltage
Symbol
VRRM
Conditions
Maximum Ratings
1200
V
IFAV25
IFAV80
TC = 25°C; sine 180°
TC = 80°C; sine 180°
15
10
A
A
IFSM
TVJ = 25°C; t = 10 ms sine 50 Hz
75
A
Features
• high level of integration -
only one power semiconductor
module required for the whole PFC
rectifier
• standard PFC control ICs useable
• fast rectifier diodes for enhanced
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IR
IF = 10 A
VR = VRRM
TVJ = 25°C
TVJ = 125°C
1.4
1.6
1.8
V
V
EMC
behaviour
• NPT IGBT with low saturation voltage,
ultra fast switching capability,
high RBSOA and short circuit
ruggedness
• internally series connected
HiPerFREDTM free wheeling diode
for fast and soft reverse recovery at
high switching frequency
TVJ = 25°C
TVJ = 125°C
0.05 mA
mA
0.5
1
trr
VR = 100 V; IF = 10 A; -di/dt = 5 A/µs
µs
RthJC
RthJH
(per diode)
with heat transfer paste
2.5 K/W
K/W
3.8
• package with insulated DCB base and
soldering pins for PCB mounting
© 2007 IXYS All rights reserved
1 - 3
VUI 9-06N7
Chopper T
Symbol
VCES
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
Continous
600
20
V
V
VGES
IC25
IC80
TC = 25°C
TC = 80°C
37
25
A
A
RBSOA
VCE = 600 V; RG = 10 Ω; TVJ = 125°C
Clamped inductive load; L = 100 µH
ICM = 100
VCEK ≤ VCES
A
tSC
VCE = 600 V; VGE = 15 V; RG = 10 Ω;
TVJ = 125°C; non-repetitive
10
µs
Symbol
VCE(sat)
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
IC = 10 A; VGE = 15 V ; TVJ = 25°C
TVJ = 125°C
1.5
1.6
1.8
V
V
VGE(th)
ICES
IC = 1 mA; VGE = VCE
3
5
V
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
0.04 mA
mA
1
IGES
VCE = 0 V; VGE = 20 V
100 nA
td(on)
tr
td(off)
tf
Eon
Eoff
30
50
320
70
0.60
0.31
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
VCE = 400 V; IC = 10 A
VGE = 15 V; RG = 10 Ω
0
=
Cies
QGon
VCE = 25 V; VGE
VCE = 480 V; VGE
=
V; f = 1 MHz
15
1600
140
pF
nC
V; IC = 10 A
RthJC
RthJH
0.96 K/W
K/W
with heat transfer paste
1.5
Chopper D1
Symbol
VRRM
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600
V
IF25
IF80
TC = 25°C
TC = 80°C
35
22
A
A
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IR
IF = 10 A; TVJ = 25°C
TVJ = 125°C
2.2
3.2
2.4
V
V
VR = VRRM; TVJ = 25°C
TVJ = 125°C
0.1 mA
mA
0.1
IRM
trr
IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C
VR = 300 V
8
50
A
ns
RthJC
RthJH
1.15 K/W
K/W
with heat transfer paste
1.8
© 2007 IXYS All rights reserved
2 - 3
VUI 9-06N7
Module
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
-40...+150
-40...+125
°C
°C
VISOL
Md
IISOL ≤ 1 mA; 50/60 Hz; t = 1 min
3000
V~
Mounting torque (M4)
1.5 - 2.0
Nm
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
dS
dA
Creepage distance on surface
Strike distance through air
tbd
tbd
mm
mm
Weight
typ.
18
g
Dimensions in mm (1 mm = 0.0394")
+ 0,1
-0,1
+ 0,1
-0,1
13,7
13,7
+ 0,3
10,8 -0,3
+ 0,3
10,8-0,3
+ 0,2
1,2
-0,2
+ 0,2
1,2
-0,2
+ 0,3
5,2
-0,3
1,5
2
39
47+-00,,22
© 2007 IXYS All rights reserved
3 - 3
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