VUI9-06N7 [LITTELFUSE]

Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel,;
VUI9-06N7
型号: VUI9-06N7
厂家: LITTELFUSE    LITTELFUSE
描述:

Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel,

局域网 栅 功率控制 晶体管
文件: 总3页 (文件大小:133K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
VUI 9-06N7  
VRRM = 1200 V  
IFAV25 = 15 A  
Rectifier Module for  
Power Factor Correction  
VCES = 600 V  
IC25 = 37 A  
Fast Single Phase Rectifier  
Ultra Fast Boost Chopper  
Preliminary data sheet  
J
A
B
N
E
Typical Rectified Mains Power  
D 11  
D 13  
D 14  
D 1  
Pn = 900 W at Vn = 110 V  
H
Pn = 2100 W at Vn = 240 V  
D 12  
7
T
at VDC = 400 V, fT = 75 kHz, TC = 80°C  
G
G
Pin configuration see outlines  
Application  
Input Rectifier Bridge D11 - D14  
• single phase rectification with power  
factor correction (PFC)  
• low harmonic content of mains current  
• mains current and voltage in phase  
• wide input voltage range, controlled  
output voltage  
Symbol  
VRRM  
Conditions  
Maximum Ratings  
1200  
V
IFAV25  
IFAV80  
TC = 25°C; sine 180°  
TC = 80°C; sine 180°  
15  
10  
A
A
IFSM  
TVJ = 25°C; t = 10 ms sine 50 Hz  
75  
A
Features  
• high level of integration -  
only one power semiconductor  
module required for the whole PFC  
rectifier  
• standard PFC control ICs useable  
• fast rectifier diodes for enhanced  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
VF  
IR  
IF = 10 A  
VR = VRRM  
TVJ = 25°C  
TVJ = 125°C  
1.4  
1.6  
1.8  
V
V
EMC  
behaviour  
• NPT IGBT with low saturation voltage,  
ultra fast switching capability,  
high RBSOA and short circuit  
ruggedness  
• internally series connected  
HiPerFREDTM free wheeling diode  
for fast and soft reverse recovery at  
high switching frequency  
TVJ = 25°C  
TVJ = 125°C  
0.05 mA  
mA  
0.5  
1
trr  
VR = 100 V; IF = 10 A; -di/dt = 5 A/µs  
µs  
RthJC  
RthJH  
(per diode)  
with heat transfer paste  
2.5 K/W  
K/W  
3.8  
• package with insulated DCB base and  
soldering pins for PCB mounting  
© 2007 IXYS All rights reserved  
1 - 3  
VUI 9-06N7  
Chopper T  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
Continous  
600  
20  
V
V
VGES  
IC25  
IC80  
TC = 25°C  
TC = 80°C  
37  
25  
A
A
RBSOA  
VCE = 600 V; RG = 10 ; TVJ = 125°C  
Clamped inductive load; L = 100 µH  
ICM = 100  
VCEK VCES  
A
tSC  
VCE = 600 V; VGE = 15 V; RG = 10 ;  
TVJ = 125°C; non-repetitive  
10  
µs  
Symbol  
VCE(sat)  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
IC = 10 A; VGE = 15 V ; TVJ = 25°C  
TVJ = 125°C  
1.5  
1.6  
1.8  
V
V
VGE(th)  
ICES  
IC = 1 mA; VGE = VCE  
3
5
V
VCE = VCES; VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.04 mA  
mA  
1
IGES  
VCE = 0 V; VGE = 20 V  
100 nA  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
30  
50  
320  
70  
0.60  
0.31  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 400 V; IC = 10 A  
VGE = 15 V; RG = 10 Ω  
0
=
Cies  
QGon  
VCE = 25 V; VGE  
VCE = 480 V; VGE  
=
V; f = 1 MHz  
15  
1600  
140  
pF  
nC  
V; IC = 10 A  
RthJC  
RthJH  
0.96 K/W  
K/W  
with heat transfer paste  
1.5  
Chopper D1  
Symbol  
VRRM  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
600  
V
IF25  
IF80  
TC = 25°C  
TC = 80°C  
35  
22  
A
A
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
VF  
IR  
IF = 10 A; TVJ = 25°C  
TVJ = 125°C  
2.2  
3.2  
2.4  
V
V
VR = VRRM; TVJ = 25°C  
TVJ = 125°C  
0.1 mA  
mA  
0.1  
IRM  
trr  
IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C  
VR = 300 V  
8
50  
A
ns  
RthJC  
RthJH  
1.15 K/W  
K/W  
with heat transfer paste  
1.8  
© 2007 IXYS All rights reserved  
2 - 3  
VUI 9-06N7  
Module  
Symbol  
Conditions  
Maximum Ratings  
TVJ  
Tstg  
-40...+150  
-40...+125  
°C  
°C  
VISOL  
Md  
IISOL 1 mA; 50/60 Hz; t = 1 min  
3000  
V~  
Mounting torque (M4)  
1.5 - 2.0  
Nm  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
dS  
dA  
Creepage distance on surface  
Strike distance through air  
tbd  
tbd  
mm  
mm  
Weight  
typ.  
18  
g
Dimensions in mm (1 mm = 0.0394")  
+ 0,1  
-0,1  
+ 0,1  
-0,1  
13,7  
13,7  
+ 0,3  
10,8 -0,3  
+ 0,3  
10,8-0,3  
+ 0,2  
1,2  
-0,2  
+ 0,2  
1,2  
-0,2  
+ 0,3  
5,2  
-0,3  
1,5  
2
39  
47+-00,,22  
© 2007 IXYS All rights reserved  
3 - 3  

相关型号:

VUM24-05

Power MOSFET Stage for Boost Converters
IXYS

VUM24-05N

Power MOSFET Stage for Boost Converters Module for Power Factor Correction
IXYS

VUM2405

Power MOSFET Stage for Boost Converters
IXYS

VUM25-05

Rectifier Module for Three Phase Power Factor Correction
IXYS

VUM25-05E

Rectifier Module for Three Phase Power Factor Correction
IXYS

VUM33-05

Power MOSFET Stage for Boost Converters
IXYS

VUM33-05N

Power MOSFET Stage for Boost Converters
IXYS

VUM33-06PH

Power Field-Effect Transistor, 50A I(D), 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8
IXYS

VUM35-05P1

Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ECOPAC-8
LITTELFUSE

VUM85-05A

Rectifier Module for Three Phase Power Factor Correction
IXYS

VUO100

Three Phase Rectifier Bridge
IXYS

VUO100-08NO7

Three Phase Rectifier Bridge
IXYS