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VUM24-05 [IXYS]

Power MOSFET Stage for Boost Converters; 对于升压转换器的功率MOSFET级
VUM24-05
型号： VUM24-05
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Power MOSFET Stage for Boost Converters
对于升压转换器的功率MOSFET级

晶体 转换器 晶体管 功率场效应晶体管 开关 脉冲 升压转换器 局域网
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VUM 24-05  
ID25  
= 35 A  
Power MOSFET Stage  
for Boost Converters  
VDSS = 500 V  
RDS(on) = 0.12 W  
Module for Power Factor Correction  
5
1 3  
2 7 8  
4 6  
4
3
VRRM (Diode)  
VDSS  
Type  
2
1
V
V
600  
500  
VUM 24-05N  
8
7
6
5
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
VGS  
TVJ = 25°C to 150°C  
TVJ = 25°C to 150°C; RGS = 10 kW  
Continuous  
500  
500  
±20  
V
V
V
Features  
ID  
ID  
IDM  
TS = 85°C  
TS = 25°C  
TS = 25°C, tp = ①  
24  
35  
95  
A
A
A
①
Package with DCB ceramic base plate  
Soldering connections for PCB  
mounting  
Isolation voltage 3600 V~  
Low RDS(on) HDMOSTM process  
Low package inductance for high  
speed switching  
①
①
①
①
PD  
TS = 85°C  
170  
W
IS  
ISM  
VGS = 0 V, TS = 25°C  
VGS = 0 V, TS = 25°C, tp = ①  
24  
95  
A
A
①
①
Ultrafast boost diode  
Kelvin source for easy drive  
VRRM  
IdAV  
600  
40  
V
A
TS = 85°C, rectangular d = 0.5  
Applications  
IFSM  
TVJ = 45°C, t = 10 ms (50 Hz)  
300  
320  
A
A
t = 8.3 ms (60 Hz)  
①
Power factor pre-conditioner for  
TVJ = 150°C, t = 10 ms (50 Hz)  
260  
280  
A
A
SMPS, UPS, battery chargers and  
inverters  
Boost topology for SMPS including  
t = 8.3 ms (60 Hz)  
①
P
TS = 85°C  
36  
W
1~ rectifier bridge  
Power supply for welding equipment  
①
VRRM  
IdAV  
800  
40  
V
A
TS = 85°C, sinus 180°  
Advantages  
IFSM  
TVJ = 45°C, t = 10 ms (50 Hz)  
300  
320  
A
A
①
t = 8.3 ms (60 Hz)  
3 functions in one package  
①
Output power up to 5 kW  
No external isolation  
Easy to mount with two screws  
Suitable for wave soldering  
TVJ = 150°C, t = 10 ms (50 Hz)  
260  
280  
A
A
①
t = 8.3 ms (60 Hz)  
①
①
P
TS = 85°C  
33  
W
①
High temperature and power cycling  
capability  
Fits easiliy to all available PFC  
controller ICs  
TVJ  
TJM  
Tstg  
-40...+150  
150  
-40...+150  
°C  
°C  
°C  
①
VISOL  
50/60 Hz  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
Md  
Weight  
Mounting torque (M5)  
2-2.5/18-22 Nm/lb.in.  
28  
g
① Pulse width limited by TVJ  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 4  
VUM 24-05  
Symbol  
Test Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
350  
A
V = 0.8V  
R
RRM  
min.  
typ. max.  
300  
250  
200  
150  
100  
50  
VDSS  
VGS = 0 V, ID = 2 mA  
500  
2
V
V
IFSM  
VGS(th)  
VDS = 20 V, ID = 20 mA  
5
TVJ= 45 C  
IGSS  
IDSS  
VGS = ±20 V, VDS = 0 V  
±500 nA  
VDS = 500 V, VGS = 0 V  
2
mA  
RDS(on)  
RGint  
TVJ = 25°C  
TVJ = 25°C  
0.12  
1.5  
W
W
TVJ= 125 C  
gfs  
VDS  
VDS = 15 V, IDS = 12 A  
IDS = 24 A, VGS = 0 V  
30  
S
V
0
0.001  
0.01  
t
0.1  
1
s
1.5  
Fig. 1 Non-repetitive peak surge  
td(on)  
td(off)  
100 ns  
220 ns  
VDS = 250 V, IDS = 12 A, VGS = 10 V  
Zgen. = 1 W, L-load  
current (Rectifier Diodes)  
Ciss  
Coss  
Crss  
8.5  
0.9  
0.3  
nF  
nF  
nF  
500  
A2s  
400  
V
DS = 25 V, f = 1 MHz, VGS = 0 V  
Qg  
VDS = 250 V, ID = 12 A, VGS = 10 V  
350  
nC  
RthJS  
0.38 K/W  
300  
VF  
IR  
IF  
= 22 A; TVJ = 25°C  
TVJ =150°C  
1.65  
1.4  
V
V
I2t  
TVJ= 45 C  
200  
100  
0
VR = 600 V, TVJ = 25°C  
VR = 480 V, TVJ = 25°C  
TVJ =125°C  
1.5 mA  
0.25 mA  
TVJ= 125 C  
7
mA  
VT0  
rT  
For power-loss calculations only  
TVJ = 125°C  
1.14  
10 mW  
V
1
ms 10  
t
IRM  
IF  
= 30 A; -diF/dt = 240 A/ms  
Fig. 2 I2t for fusing (Rectifier Diodes)  
VR = 350 V, TVJ = 100°C  
10  
11  
A
RthJS  
VF  
1.8 K/W  
Dimensions in mm (1 mm = 0.0394")  
IF  
= 20 A, TVJ = 25°C  
TVJ =125°C  
1.4  
1.4  
V
V
IR  
VR = 800 V TVJ = 25°C  
VR = 640 V, TVJ =125°C  
0.25 mA  
2
mA  
VT0  
rT  
For power-loss calculations only  
TVJ = 125°C  
1.05  
16 mW  
V
RthJS  
2 K/W  
© 2000 IXYS All rights reserved  
2 - 4  
VUM 24-05  
80  
80  
A
2.5  
10 V  
RDS(on) ID=18A  
A
70  
70  
2.0  
7 V  
60  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
6 V  
norm.  
ID  
ID  
1.5  
1.0  
0.5  
0.0  
TVJ = 25 C  
TVJ = 125 C  
VGS= 5 V  
0
2
4
VDS  
6
8
10  
V
2
3
4
VGS  
5
6
7
-50  
0
TVJ  
50  
100  
150  
°C  
V
Fig. 3 Typ. output characteristic  
ID = f (VDS) (MOSFET)  
Fig. 4 Typ. transfer characteristics  
ID = f (VGS) (MOSFET)  
Fig. 5 Typ. normalized  
RDS(on) = f (TVJ) (MOSFET)  
1.4  
BVDSS  
VGS(th)  
12  
V
100  
nF  
10  
1.2  
VDS= 250 V  
VGS(th)  
VDSS  
Ciss  
ID = 18 A  
8
10  
VGS  
1.0  
norm.  
IG = 10 mA  
C
6
4
2
0
0.8  
0.6  
0.4  
Coss  
1
Crss  
0.1  
-50  
0
50  
100  
150  
0
100  
200  
Qg  
300 nC 400  
0
5
10  
15  
20  
°C  
V
TVJ  
VDS  
Fig. 6 Typ. normalized BVDSS = f (TVJ)  
VGS(th) = f (TVJ) (MOSFET)  
Fig. 7 Typ. turn-on gate charge  
characteristics, VGS = f (Qg) (MOSFET)  
Fig. 8 Typ. capacitances C = f (VDS),  
f = 1 MHz (MOSFET)  
120  
A
3.0  
80  
s
T
VJ=100 C  
µC  
VR= 350 V  
100  
2.5  
max.  
60  
gfs  
IF = 37 A  
80  
2.0  
1.5  
1.0  
0.5  
0.0  
Qrr  
IF  
TVJ=150 C  
IF = 74 A  
IF = 37 A  
IF = 18.5 A  
TVJ=100 C  
TVJ= 25 C  
40  
20  
0
60  
40  
20  
0
typ.  
V
A/ s  
1000  
0.5  
1.0  
1.5  
VF  
2.0  
2.5  
10  
100  
-diF/dt  
0
20  
40  
60  
ID  
80 A 100  
Fig. 9 Typ. transconductance,  
gfs = f (ID) (MOSFET)  
Fig. 10 Forward current versus  
voltage drop (Boost Diode)  
Fig. 11 Recovery charge versus -diF/dt  
(Boost Diode)  
© 2000 IXYS All rights reserved  
3 - 4  
VUM 24-05  
50  
A
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.6  
TVJ=100 C  
TVJ=100 C  
VR= 350 V  
µs  
VR= 350 V  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
40  
30  
20  
10  
0
max.  
trr  
IF = 37 A  
IRM  
Kt  
IF = 74 A  
IF = 37 A  
IF = 18.5 A  
IF = 37 A  
IF = 74 A  
IF = 37 A  
IF = 18.5 A  
max.  
IRM  
Qr  
typ.  
typ.  
A/ s  
20 40 60 80 100 120 160  
0
100 200 300 400 500 600  
0
100 200 300 400 500 600  
A/ s  
°C  
-diF/dt  
-diF/dt  
T
J  
V
Fig. 12 Peak reverse current versus  
-diF/dt (Boost Diode)  
Fig. 13 Dynamic parameters versus  
junction temperature (Boost Diode)  
Fig. 14 Recovery time versus  
-diF/dt (Boost Diode)  
18  
V
16  
8
kW  
7
6
7
kW  
0.9  
s
TS =85°C  
TS =85°C  
6
14  
VFR  
0.7  
0.5  
0.3  
5
Vin = 230 V/50 Hz  
Pout  
VFR  
fc = 40 kHz  
Pout  
12  
10  
8
5
4
3
4
3
2
1
0
Vin = 115 V/60 Hz  
2
6
fc = 80 kHz  
tFR  
tFR  
4
1
0
2
0.1  
A/ s  
0
100 200 300 400 600  
0
20  
40  
60  
80 1kHz 120  
fc  
0
50  
100  
150  
Vin (RMS)  
V
250  
diF/dt  
Fig. 15 Peak forward voltage versus  
-diF/dt (Boost Diode)  
Fig. 16 Output power versus carrier  
Fig. 17 Output power versus  
mains voltage  
frequency (Module)  
2.5  
6
VUM 24  
K/W  
kW  
fc = 80 kHz  
5
2.0  
Vin = 230 V/50 Hz  
ZthJC  
4
Rectifier Diodes  
Pout  
1.5  
1.0  
0.5  
0.0  
Boost Diode  
3
2
1
0
Vin = 115 V/60 Hz  
MOSFET  
0.01  
0.1  
1
10  
°C  
120  
s
40  
60  
80  
TS  
100  
t
Fig. 18 Output power versus  
heatsink temperature (Module)  
Fig. 19 Transient thermal impedance junction to case for all devices  
© 2000 IXYS All rights reserved  
4 - 4  

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