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IXTK210P10T

更新时间：2024-09-18 14:17:11
品牌：IXYS
描述：Power Field-Effect Transistor, 210A I(D), 100V, 0.0075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3

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IXTK210P10T 概述

Power Field-Effect Transistor, 210A I(D), 100V, 0.0075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 功率场效应晶体管

IXTK210P10T 规格参数

是否Rohs认证：符合生命周期：Transferred
零件包装代码：TO-264AA包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：8.53
Is Samacsys：N其他特性：AVALANCHE RATED
雪崩能效等级（Eas）：3000 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：210 A最大漏极电流 (ID)：210 A
最大漏源导通电阻：0.0075 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-264AAJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：1040 W最大脉冲漏极电流 (IDM)：800 A
子类别：Other Transistors表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IXTK210P10T 数据手册

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Preliminary Technical Information  
TrenchPTM  
Power MOSFETs  
VDSS = - 100V  
ID25 = - 210A  
IXTK210P10T  
IXTX210P10T  
RDS(on)  
≤
7.5mΩ  
trr  
≤
200ns  
P-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-264 (IXTK)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
S
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
-100  
-100  
V
V
VDGR  
Tab  
VGSS  
VGSM  
Continuous  
Transient  
±15  
±25  
V
V
PLUS247 (IXTX)  
ID25  
TC = 25°C (Chip Capability)  
- 210  
A
ILRMS  
IDM  
Lead Current Limit, RMS  
TC = 25°C, Pulse Width Limited by TJM  
-160  
- 800  
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
-100  
3
A
J
G
D
S
Tab  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
10  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
1040  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z
International Standard Packages  
High Current Handling Capability  
Avalanche Rated  
Extended FBSOA  
Fast Intrinsic Recitifier  
Low RDS(ON) and QG  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z
z
z
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
z
z
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C Unless Otherwise Specified)  
Min.  
-100  
- 2.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ±15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Applications  
- 4.5  
z
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
Current Regulators  
Battery Charger Applications  
±200 nA  
z
z
IDSS  
- 25 μA  
z
TJ = 125°C  
- 300 μA  
z
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
7.5 mΩ  
z
DS100397A(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTK210P10T  
IXTX210P10T  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 AA Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = - 60A, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
90  
150  
S
Ciss  
Coss  
Crss  
69.5  
4070  
1100  
nF  
pF  
pF  
td(on)  
90  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
: 1 - Gate  
2 - Drain  
tr  
98  
ns  
ns  
3 - Source  
4 - Drain  
td(off)  
165  
Dim.  
Millimeter  
Inches  
tf  
55  
ns  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
b
b1  
b2  
4.82  
2.54  
2.00  
1.12  
2.39  
2.90  
5.13  
2.89  
2.10  
1.42  
2.69  
3.09  
.190  
.100  
.079  
.044  
.094  
.114  
.202  
.114  
.083  
.056  
.106  
.122  
Qg(on)  
Qgs  
740  
200  
155  
nC  
nC  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
c
D
E
e
0.53  
25.91 26.16  
19.81 19.96  
5.46 BSC  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
RthJC  
RthCS  
0.12 °C/W  
°C/W  
0.15  
.215 BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
Q
Q1  
3.17  
6.07  
8.38  
3.66  
6.27  
8.69  
.125  
.239  
.330  
.144  
.247  
.342  
Source-Drain Diode  
R
R1  
S
T
3.81  
1.78  
6.04  
1.57  
4.32  
2.29  
6.30  
1.83  
.150  
.070  
.238  
.062  
.170  
.090  
.248  
.072  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
- 210  
- 840  
-1.4  
IS  
VGS = 0V  
A
A
V
PLUS247TM Outline  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = -100A, VGS = 0V, Note 1  
trr  
QRM  
IRM  
200 ns  
IF = -105A, -di/dt = -100A/μs  
930  
12.4  
nC  
A
VR = -100V, VGS = 0V  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTK210P10T  
IXTX210P10T  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
-220  
-200  
-180  
-160  
-140  
-120  
-100  
-80  
-400  
-350  
-300  
-250  
-200  
-150  
-100  
-50  
VGS = -10V  
VGS = -10V  
- 7V  
- 8V  
- 7V  
- 6V  
- 6V  
- 5V  
- 4V  
-60  
- 5V  
- 4V  
-40  
-20  
0
0
0
0
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-1.2  
-1.4  
-2.4  
-350  
0
-1  
-2  
-3  
-4  
-5  
-6  
-7  
-8  
-9  
-10  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = -105A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
-220  
-200  
-180  
-160  
-140  
-120  
-100  
-80  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = -10V  
VGS = -10V  
- 8V  
- 7V  
I D = - 210A  
- 6V  
- 5V  
I D = -105A  
-60  
-40  
- 4V  
-20  
0
-0.4  
-0.8  
-1.2  
-1.6  
-2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = -105A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
-180  
-160  
-140  
-120  
-100  
-80  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = -10V  
External Lead Current Limit  
TJ = 125ºC  
-60  
TJ = 25ºC  
-40  
-20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-100  
-150  
-200  
-250  
-300  
TC - Degrees Centigrade  
ID - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTK210P10T  
IXTX210P10T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
-300  
-250  
-200  
-150  
-100  
-50  
300  
250  
200  
150  
100  
50  
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
0
0
-3.0  
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
0
-50  
-100  
-150  
ID - Amperes  
-200  
-250  
-300  
VGS - Volts  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
-350  
-300  
-250  
-200  
-150  
-100  
-50  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
VDS = - 50V  
I D = -105A  
I G = -1mA  
TJ = 125ºC  
TJ = 25ºC  
0
-0.3  
-0.4  
-0.5  
-0.6  
-0.7  
-0.8  
-0.9  
-1.0  
-1.1  
-1.2  
-1.3  
-1.4  
0
100  
200  
300  
400  
500  
600  
700  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
-
1,000  
RDS(on) Limit  
100µs  
C
iss  
= 1 MHz  
f
1ms  
100  
-
External Lead Current Limit  
10ms  
C
C
oss  
10  
-
100ms  
TJ = 150ºC  
DC  
TC = 25ºC  
Single Pulse  
rss  
-
1
1
10  
-
100  
-
-
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTK210P10T  
IXTX210P10T  
Fig. 14. Resistive Turn-on Rise Time vs.  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Drain Current  
120  
110  
100  
90  
120  
110  
100  
90  
RG = 1Ω, VGS = -10V  
DS = - 50V  
RG = 1Ω, VGS = -10V  
V
VDS = - 50V  
I D = -100A  
TJ = 125ºC  
I D = - 50A  
TJ = 25ºC  
80  
70  
80  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
-50  
-55  
-60  
-65  
-70  
-75  
-80  
-85  
-90  
-95  
-100  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
350  
300  
250  
200  
150  
100  
50  
700  
90  
85  
80  
75  
70  
65  
60  
55  
50  
45  
40  
320  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
tf  
t
d(off) - - - -  
TJ = 125ºC, VGS = -10V  
DS = - 50V  
tf  
t
d(off) - - - -  
RG = 1Ω, VGS = -10V  
DS = - 50V  
600  
500  
400  
300  
200  
100  
0
V
V
I D = -100A  
I D = - 50A  
I D = -100A  
I D = - 50A  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
90  
80  
70  
60  
50  
40  
300  
260  
220  
180  
140  
100  
500  
400  
300  
200  
100  
0
1000  
tf  
t
d(off) - - - -  
RG = 1Ω, VGS = -10V  
DS = - 50V  
tf  
t
d(off) - - - -  
TJ = 125ºC, VGS = -10V  
VDS = - 50V  
800  
600  
400  
200  
0
V
TJ = 125ºC  
I D = - 50A  
I D = -100A  
TJ = 25ºC  
-50  
-55  
-60  
-65  
-70  
-75  
-80  
-85  
-90  
-95  
-100  
1
2
3
4
5
6
7
8
9
10  
ID - Amperes  
RG - Ohms  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTK210P10T  
IXTX210P10T  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.0001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_210P10T(A9) 10-18-11  

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