IXGP20N120B [IXYS]
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN;
| 型号： | IXGP20N120B |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN 晶体 晶体管 电动机控制 双极性晶体管 栅 局域网 |
| 文件： | 总2页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V
I
V
= 1200 V
= 40 A
= 2.5 V
IXGA 20N120
IXGP 20N120
CES
IGBT
C25
t CE(sat) = 380 ns
fi(typ)
Symbol
Test Conditions
Maximum Ratings
TO-220AB(IXGP)
VCES
VCGR
TJ = 25°C to 150°C
1200
1200
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
E
IC25
IC90
ICM
TC = 25°C
40
20
80
A
A
A
TC = 90°C
TO-263AA(IXGA)
TC = 25°C, 1 ms
SSOA
VGE = 15 V, TVJ = 125°C, RG = 47 Ω
ICM = 40
A
G
(RBSOA)
Clamped inductive load
@ 0.8 VCES
C (TAB)
E
PC
TC = 25°C
150
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
Features
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
• International standard packages
JEDEC TO-220AB and TO-263AA
• High current handling capability
• MOS Gate turn-on
Maximum tab temperature for soldering
260
°C
Md
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
- drive simplicity
Weight
TO-220
TO-263
4
2
g
g
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
BVCES
VGE(th)
IC = 1 mA, VGE = 0 V
1200
2.5
V
V
IC = 250 µA, VCE = VGE
5.0
• Capacitor discharge
ICES
VCE = VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
250
1
µA
Advantages
mA
IGES
VCE = 0 V, VGE = ±20 V
±100
nA
V
• Easy to mount with one screw
• Reduces assembly time and cost
• High power density
VCE(sat)
IC = IC90, VGE = 15 V
2.0
2.5
98752A (06/02)
© 2002 IXYS All rights reserved
IXGA 20N120
IXGP 20N120
TO-220 AB Dimensions
Symbol
TestConditions
Characteristic Values
Min. Typ. Max.
(TJ = 25°C, unless otherwise specified)
gfs
IC = IC90; VCE = 10 V,
12
16
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
1750
90
pF
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
pF
pF
Cres
31
90
IC(ON)
VGE = 10V, VCE = 10V
A
Qg
63
13
26
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Pins: 1 - Gate
3 - Emitter
2 - Collector
4 - Collector
Bottom Side
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
28
ns
ns
ns
ns
mJ
IC = IC90, VGE = 15 V
20
VCE = 800 V, RG = Roff = 47 Ω
400 800
380 700
6.5 10.5
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
,
,
Eoff
td(on)
tri
30
27
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
Eon
td(off)
tfi
0.90
700
550
9.5
mJ
ns
VCE = 800 V, RG = Roff = 47 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
ns
Eoff
mJ
RthJC
RthCK
0.83 K/W
K/W
TO-263AAOutline
TO-220
0.5
1. Gate
2. Collector
3. Emitter
4. Collector
BottomSide
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
Min.RecommendedFootprint
(Dimensions in inches and mm)
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
E1
e
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
L1
L2
L3
L4
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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