IXGP24N60C [IXYS]
HiPerFAST IGBT Lightspeed Series; HiPerFAST IGBT系列光速
| 型号： | IXGP24N60C |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBT Lightspeed Series |
| 文件： | 总2页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFASTTM IGBT
LightspeedTM Series
IXGA 24N60C
IXGP 24N60C
VCES
IC25
= 600 V
= 48 A
VCE(sat)typ = 2.1 V
tfi typ
= 60 ns
Symbol
Test Conditions
Maximum Ratings
TO-220 AB (IXGP)
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
600
600
V
V
C (TAB)
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
E
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
48
24
96
A
A
A
TO-263 AA (IXGA)
SSOA
V
= 15 V, TVJ = 125°C, R = 22 Ω
ICM = 48
A
(RBSOA)
CGlaEmped inductive load, LG= 100 µH
TC = 25°C
@ 0.8 VCES
G
E
C (TAB)
PC
150
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G = Gate,
C = Collector,
TAB = Collector
E = Emitter,
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Features
z
International standard packages
JEDEC TO-247 and surface
mountable TO-268
Md
Mounting torque (M3)
1.13/10Nm/lb.in.
Weight
TO-263
TO-220
2
4
g
g
z
z
z
z
High frequency IGBT
High current handling capability
Latest generation HDMOSTM process
MOS Gate turn-on
- drive simplicity
Symbol
BVCES
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Applications
z
PFC circuits
z
Uninterruptible power supplies (UPS)
z
IC = 250 µA, VGE = 0 V
IC = 250 µA, VCE = VGE
600
2.5
V
Switched-mode and resonant-mode
power supplies
z
AC motor speed control
VGE(th)
ICES
5
V
z
DC servo and robot drives
z
DC choppers
VCE = 0.8 • VCES
VGE = 0 V
T = 25°C
200
1
µA
TJJ = 150°C
mA
Advantages
IGES
VCE = 0 V, VGE = ±20 V
±100
nA
V
z
High power density
z
Very fast switching speeds for high
VCE(sat)
IC = IC110, VGE = 15 V
2.1
2.5
frequency applications
98936 7/02)
© 2002 IXYS All rights reserved
IXGA 24N60C
IXGP 24N60C
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-220 AB Outline
IC = I ; V = 10 V,
9
17
S
Pulse Cte11s0t, tC≤E 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
1500
120
40
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC110, VGE = 15 V, VCE = 0.5 VCES
Qg
Qge
Qgc
55
13
17
nC
nC
nC
Pins:
1 - Gate
2 - Collector 3 - Emitter
4 - Collector Bottom Side
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
td(on)
tri
td(off)
tfi
Inductive load, TJ = 25°C
15
25
75
60
0.24
ns
ns
A
B
12.70 13.97 0.500 0.550
IC = IC110, VGE = 15 V, L = 100 µH,
14.73 16.00 0.580 0.630
VCE = 0.8 VCES, RG = Roff = 10 Ω
C
9.91 10.66 0.390 0.420
140 ns
110 ns
0.36 mJ
D
3.54
4.08 0.139 0.161
Remarks: Switching times may
increase for V (Clamp) > 0.8 • VCES
higher TJ or inCcEreased RG
E
F
5.85
6.85 0.230 0.270
,
,
2.54
3.18 0.100 0.125
Eoff
G
1.15
2.79
1.65 0.045 0.065
5.84 0.110 0.230
H
td(on)
tri
Eon
td(off)
tfi
15
25
0.15
130
110
0.6
ns
ns
mJ
ns
ns
mJ
Inductive load, TJ = 125°C
IC = IC110, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 10 Ω
J
0.64
1.01 0.025 0.040
K
2.54
BSC 0.100
BSC
M
4.32
1.14
4.82 0.170 0.190
N
1.39 0.045 0.055
Q
R
0.35
0.56 0.014 0.022
2.79 0.090 0.110
Remarks: Switching times may
increase for V (Clamp) > 0.8 • VCES
higher TJ or inCcEreased RG
2.29
Eoff
TO-263 AA Outline
RthJC
RthCK
0.83 K/W
K/W
0.25
Min. Recommended Footprint
(Dimensions in inches and mm)
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
1.14
0.99
1.40
.020
.045
.039
.055
b2
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
7.11
9.65
8.13
.340
.280
.380
.320
D1
E
9.65
6.86
2.54
10.29
.380
.405
E1
e
8.13
.270
.320
BSC
.100 BSC
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
L1
L2
L3
L4
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
4,850,072 4,931,844
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