IXGP28N120B [LITTELFUSE]
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN;
| 型号： | IXGP28N120B |
| 厂家： | 
LITTELFUSE |
| 描述： | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN 局域网 栅 功率控制 晶体管 |
| 文件： | 总5页 (文件大小：565K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXGP 28N120B VCES = 1200 V
IC25 50 A
High Voltage IGBT
=
VCE(sat) = 3.5 V
tfi(typ) = 160 ns
TO-220 (IXGP)
Symbol
TestConditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
1200
1200
V
V
VGES
VGEM
Continuous
Transient
20
30
V
V
C (TAB)
G
C
E
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
50
28
150
A
A
A
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
SSOA
V
= 15 V, TVJ = 125°C, RG = 5 Ω
I
= 60
A
(RBSOA)
CGlaE mped inductive load
@ 0C.8M VCES
250
Features
z
PC
TC = 25°C
W
High Voltage IGBT for resonant
power supplies
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
- Induction heating
- Rice cookers
z
International standard package
JEDEC TO-220
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
z
z
Low switching losses, low V(sat)
MOS Gate turn-on
- drive simplicity
Md
Mounting torque (M3.5) (TO-220)
0.55/5Nm/lb.in.
Weight
4
g
Advantages
z
High power density
z
Suitable for surface mounting
z
Easy to mount with 1 screw
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
VGE(th)
I
= 250 µA , VGE = 0 V
1200
2.5
V
ICC = 250 µA, VCE = VGE
5
V
ICES
VCE = VCES, VGE= 0 V
T = 25°C
25
µA
µA
TJJ = 125°C
250
IGES
VCE = 0 V, VGE = 20 V
IC = 28A, VGE = 15 V
100
3.5
nA
VCE(sat)
2.9
2.8
V
V
TJ = 125°C
© 2003 IXYS All rights reserved
DS99139(12/03)
IXGP 28N120B
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-220 Outline
IC = 28A; VCE = 10 V,
18
25
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
2700
170
60
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
Qge
Qgc
92
15
30
nC
nC
nC
IC = 28A, VGE = 15 V, VCE = 0.5 VCES
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
td(on)
tri
td(off)
tfi
30
20
180
160
2.0
ns
ns
280 ns
320 ns
5.0 mJ
Inductive load, TJ = 25°C
IC = 28 A, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 5 Ω
Eoff
td(on)
tri
Eon
td(off)
tfi
35
28
1.4
250
300
ns
ns
mJ
ns
ns
Inductive load, TJ = 125°C
IC = 28A, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 5 Ω
Eoff
8.0
mJ
RthJC
RthCK
0.5 K/W
K/W
0.25
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGP 28N120B
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
270
240
210
180
150
120
90
56
49
42
35
28
21
14
7
VGE = 15V
13V
VGE = 17V
15V
11V
13V
9V
7V
11V
9V
60
30
7V
5V
0
0
0.5
0.5
6
1
1.5
2
2.5
3
3.5
4
0
2
4
6
8
10 12 14 16 18 20
VC E - Volts
VC E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. Dependence of VCE(sat) on
Temperature
56
49
42
35
28
21
14
7
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VGE = 15V
13V
VGE = 15V
IC = 56A
11V
9V
7V
IC = 28A
IC = 14A
5V
0
1
1.5
2
2.5
3
3.5
4
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
Fig. 6. Input Admittance
7
6
5
4
3
2
100
90
80
70
60
50
40
30
20
10
0
TJ = 25ºC
IC = 56A
28A
14A
TJ = 125ºC
25ºC
-40ºC
7
8
9
10 11 12 13 14 15 16 17
VG E - Volts
4
5
6
7
8
9
10
VG E - Volts
© 2003 IXYS All rights reserved
IXGP 28N120B
Fig. 8. Dependence of Turn-off
Energy Loss on RG
Fig. 7. Transconductance
35
22
20
18
16
14
12
10
8
IC = 56A
30 TJ = -40ºC
25ºC
TJ = 125ºC
VGE = 15V
VCE = 960V
125ºC
25
20
15
10
5
IC = 28A
IC = 14A
6
4
0
2
0
10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
I C - Amperes
R G - Ohms
Fig. 9. Dependence of Turn-Off
Energy Loss on IC
Fig. 10. Dependence of Turn-off
Energy Loss on Temperature
20
18
16
14
12
10
8
20
18
16
14
12
10
8
RG = 5Ω
RG = 5Ω
RG = 47Ω - - - -
VGE = 15V
RG = 47Ω - - - -
VGE = 15V
VCE = 960V
IC = 56A
VCE = 960V
TJ = 125ºC
IC = 28A
IC = 14A
6
6
4
4
2
2
TJ = 25ºC
0
0
10 15 20 25 30 35 40 45 50 55 60
25 35 45 55 65 75 85 95 105 115 125
I C - Amperes
TJ - Degrees Centigrade
Fig. 11. Dependence of Turn-off
Switching Time on RG
Fig. 12. Dependence of Turn-off
Switching Time on IC
1400
1200
1000
800
700
600
500
400
300
200
100
0
td(off)
td(off)
tfi
- - - - - -
tfi - - - - - -
RG = 5Ω
TJ = 125ºC
VGE = 15V
VCE = 960V
VGE = 15V
VCE = 960V
TJ = 125ºC
TJ = 25ºC
IC = 56A
600
IC = 28A
IC = 14A
400
200
0
10 20 30 40 50 60 70 80 90 100
10 15 20 25 30 35 40 45 50 55 60
R G - Ohms
I C - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGP 28N120B
Fig. 13. Dependence of Turn-off
Switching Time on Temperature
Fig. 14. Gate Charge
550
500
450
400
350
300
250
200
150
100
50
15
12
9
td(off)
- - - - - -
RG = 5Ω
VCE = 600V
IC = 28A
tfi
IC = 14A
IG = 10mA
VGE = 15V
VCE = 960V
IC = 56A
6
IC = 28A
IC = 14A
3
0
25 35 45 55 65 75 85 95 105 115 125
0
10 20 30 40 50 60 70 80 90 100
TJ - Degrees Centigrade
Q G - nanoCoulombs
Fig. 15. Capacitance
10000
1000
100
f = 1 MHz
C
ies
C
oes
C
res
10
0
5
10
15
20
25
30
35
40
VC E - Volts
Fig. 16. Maximum Transient Thermal Resistance
1.00
0.50
0.10
1
10
100
1000
Pulse Width - milliseconds
© 2003 IXYS All rights reserved
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