IXGH12N90C_03 [IXYS]
HiPerFAST IGBT Lightspeed Series; HiPerFAST IGBT系列光速
| 型号： | IXGH12N90C_03 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBT Lightspeed Series |
| 文件： | 总4页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFASTTM IGBT
LightspeedTM Series
IXGH 12N90C VCES = 900 V
IXGX 12N90C IC25
=
=
=
24 A
3.0 V
70 ns
VCES(sat)
tfi(typ)
Symbol
TestConditions
Maximum Ratings
TO-247 (IXGH)
VCES
VCGR
TJ = 25°C to 150°C
900
900
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ
VGES
VGEM
Continuous
Transient
±20
±30
V
V
TAB)
G
C
E
IC25
IC90
ICM
TC = 25°C
24
12
48
A
A
A
TC = 90°C
PLUS 247
TC = 25°C, 1 ms
SSOA
VGE = 15 V, TVJ = 125°C, RG = 33 Ω
ICM = 24
A
(RBSOA)
Clamped inductive load
@ 0.8 VCES
(TAB)
G
D
PC
TC = 25°C
100
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
G = Gate,
C = Collector,
Md
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
E = Emitter,
TAB = Collector
Features
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
z
Very high frequency IGBT
Weight
6
g
z
z
z
New generation HDMOSTM process
International standard package
High peak current handling capability
Applications
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
z
PFC circuit
AC motor speed control
DC servo and robot drives
Switch-mode and resonant-mode
power supplies
High power audio amplifiers
z
z
z
BVCES
VGE(th)
IC = 250 µA, VGE = 0 V
IC = 250 µA, VGE = VGE
900
2.5
V
V
5.0
z
ICES
VCE = VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
100 µA
1.5 mA
Advantages
z
IGES
VCE = 0 V, VGE = ±20 V
±100 nA
Fast switching speed
High power density
z
VCE(sat)
IC = ICE90, VGE = 15 V
3.0
V
© 2003 IXYS All rights reserved
98582B(03/03)
IXGH 12N90C
IXGX 12N90C
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 Outline
IC = IC90; VCE = 10 V,
5
10
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
P
Cies
Coes
Cres
780
60
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
15
Qg
33
10
12
nC
nC
nC
e
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
td(on)
tri
td(off)
tfi
20
ns
ns
ns
ns
Inductive load, TJ = 25°C
20
IC = IC90, VGE = 15 V
VCE = 0.8 • VCES, RG = Roff = 22 Ω
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
135 200
70 180
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Eoff
0.32 0.70 mJ
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
td(on)
tri
20
20
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
P
3.55
5.89
3.65
.140 .144
Q
6.40 0.232 0.252
Eon
td(off)
tfi
0.15
200
150
0.70
mJ
ns
VCE = 0.8 • VCES, RG = Roff = 22 Ω
R
S
4.32
5.49
.170 .216
242 BSC
6.15 BSC
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
ns
PLUS 247 Outline
Eoff
mJ
RthJC
RthCK
1.25 K/W
TO-247
PLUS 247
0.25
0.15
K/W
K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGH 12N90C
IXGX 12N90C
Fig.1. SaturationVoltageCharacteristics@25oC
Fig.2. ExtendedOutputCharacteristics
100
50
13V
11V
TJ = 25oC
VGE = 15V
TJ = 25OC
40
V
GE = 15V
75
50
25
0
13V
9V
11V
30
20
10
0
9V
7V
5V
7V
0
5
10
15
0
2
4
6
8
10
VCE - Volts
VCE - Volts
Fig.3. SaturationVoltageCharacteristics@125oC
Fig.4. TemperatureDependenceofVCE(SAT)
50
1.6
TJ = 125OC
VGE = 15V
40
V
GE = 15V
IC = 24A
1.4
13V
11V
30
20
10
0
IC = 12A
1.2
9V
7V
1.0
IC = 6A
5V
0.8
0
2
4
6
8
10
-25
0
25
50
75 100 125 150
VCE - Volts
TJ - Degrees C
Fig.5. AdmittanceCurves
Fig.6. CapacitanceCurves
60
55
50
45
40
35
30
25
20
15
10
5
1000
100
10
Ciss
Coss
Crss
TJ = 125oC
TJ = 25oC
TJ = -40oC
0
4
5
6
7
8
9
10 11 12
0
5
10 15 20 25 30 35 40
VGE - Volts
VCE - Volts
© 2003 IXYS All rights reserved
IXGH 12N90C
IXGX 12N90C
Fig. 8. Dependence of EOFF on RG
3.0
Fig. 7. Dependence of EOFF on IC
2.0
1.5
1.0
0.5
0.0
TJ = 125°C
TJ = 125°C
2.5
2.0
1.5
1.0
0.5
0.0
RG = 10Ω
E(OFF)
IC = 24A
E(OFF)
IC = 12A
IC = 6A
E(OFF)
E(OFF)
0
10
20
30
40
50
60
5
10
15
20
25
RG - Ohms
IC - Amperes
Fig. 9. Gate Charge
Fig.10. Turn-offSafeOperatingArea
100
16
14
12
10
8
I
C = 12A
VCE = 450V
24
10
TJ = -55 to +125°C
RG = 10Ω
dV/dt < 5V/ns
1
6
4
2
0
0.1
0
10
20
30
40
0
200
400
600
800
1000
Qg - nanocoulombs
VCE - Volts
Fig.11. TransientThermalResistance
10
1
Single pulse
0.1
0.01
0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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