IXFX24N100F [IXYS]
HiPerRF Power MOSFETs; HiPerRF功率MOSFET![IXFX24N100F](http://pdffile.icpdf.com/pdf1/p00030/img/icpdf/IXFX24N100F_157613_icpdf.jpg)
型号: | IXFX24N100F |
厂家: | ![]() |
描述: | HiPerRF Power MOSFETs |
文件: | 总2页 (文件大小:101K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
Advance Technical Information
HiPerRFTM
Power MOSFETs
F-Class: MegaHertz Switching
IXFX 24N100F VDSS = 1000 V
IXFK 24N100F ID25 24 A
=
RDS(on) = 0.39 Ω
N-ChannelEnhancementMode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
t ≤ 250 ns
rr
PLUS247TM
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
T
T
= 25°C to 150°C
= 25°C to 150°C; R = 1 MΩ
1000
1000
V
V
(TAB)
J
J
G
D
GS
VGS
VGSM
Continuous
Transient
±20
±30
V
V
TO-264AA(IXFK)
ID25
IDM
IAR
T
= 25°C
24
96
24
A
A
A
C
T
= 25°C, pulse width limited by T
= 25°C
C
JM
G
T
C
D
S
(TAB)
EAR
EAS
T
= 25°C
= 25°C
60
3.0
mJ
J
C
T
C
G = Gate
D = Drain
S = Source
TAB = Drain
dv/dt
I
≤ I , di/dt ≤ 100 A/µs, V ≤ V
10
V/ns
S
DM
DD
DSS
T
≤ 150°C, R = 2 Ω
J
G
Features
PD
TJ
T
= 25°C
560
W
C
l
RF capable MOSFETs
-55 ... +150
°C
l
l
l
l
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
TJM
Tstg
150
-55 ... +150
°C
°C
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Md
Mounting torque
TO-264
0.4/6 Nm/lb.in.
Weight
PLUS 247
TO-264
6
10
g
g
Applications
l
DC-DC converters
Symbol
VDSS
TestConditions
Characteristic Values
(T = 25°C, unless otherwise specified)
l
Switched-mode and resonant-mode
power supplies, >500kHz switching
J
min. typ. max.
l
DC choppers
VGS = 0 V, ID = 1mA
VDS = VGS, ID = 8mA
1000
3.0
V
l
Pulsegeneration
l
Laser drivers
VGS(th)
IGSS
5.5 V
V
= ±20 V, V = 0
±200 nA
GS
DS
Advantages
IDSS
V
V
= V
= 0 V
T
T
=
25°C
100 µA
3 mA
DS
DSS
J
l
TM
PLUS 247 package for clip or spring
= 125°C
GS
J
mounting
RDS(on)
V
Note 1
= 10 V, I = 0.5 I
0.39
Ω
l
l
GS
D
D25
Space savings
High power density
98874 (1/02)
© 2002 IXYS All rights reserved
IXFK 24N100F
IXFX 24N100F
Symbol
gfs
TestConditions
Characteristic Values
(T = 25°C, unless otherwise specified)
PLUS247TM Outline
J
min. typ. max.
V
= 10 V; I = 0.5 I
D25
Note 1
16
24
S
DS
D
Ciss
Coss
Crss
6600
760
pF
pF
pF
V
= 0 V, V = 25 V, f = 1 MHz
GS
DS
230
td(on)
tr
td(off)
tf
22
18
52
11
ns
ns
ns
ns
V
= 10 V, V = 0.5 V , I = 0.5 I
D25
GS
DS
DSS
D
R = 1 Ω (External)
G
Terminals: 1 - Gate
2 - Drain (Collector)
3-Source(Emitter)
4 - Drain (Collector)
Qg(on)
Qgs
195
40
nC
nC
nC
Dim.
A
Millimeter
Min. Max.
Inches
Min. Max.
V
= 10 V, V = 0.5 V , I = 0.5 I
DS DSS D D25
GS
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
Qgd
100
A
1
A
2
RthJC
RthCK
0.21 K/W
K/W
b1.14
b
1.40
.045 .055
1.91
2.92
2.13
3.12
.075 .084
.115 .123
1
0.15
b
2
C
D
E
0.61
0.80
.024 .031
.819 .840
.620 .635
20.80 21.34
15.75 16.13
e
5.45 BSC
19.81 20.32
.215 BSC
.780 .800
.150 .170
Source-DrainDiode
Characteristic Values
(T = 25°C, unless otherwise specified)
L
L1
J
3.81
4.32
Symbol
TestConditions
= 0 V
min. typ. max.
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IS
V
24
96
A
A
GS
TO-264 AA Outline
ISM
Repetitive;
pulse width limited by T
JM
VSD
I = I , V = 0 V, Note 1
1.5
V
F
S
GS
trr
250 ns
I = I ,-di/dt = 100 A/µs, V = 100 V
QRM
IRM
1.4
10
µC
F
S
R
A
Millimeter
Dim.
Inches
Min.
Max.
Min.
Max.
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
A
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
A1
A2
.114
.083
b
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
b1
b2
c
0.53
25.91
19.81
0.83
26.16
19.96
.021
1.020
.780
.033
1.030
.786
D
E
e
5.46BSC
.215BSC
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
L
L1
20.32
2.29
20.83
2.59
.800
.090
.820
.102
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00236/img/page/IXFX24N100Q3_1384631_files/IXFX24N100Q3_1384631_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00236/img/page/IXFX24N100Q3_1384631_files/IXFX24N100Q3_1384631_2.jpg)
IXFX24N100Q3
Power Field-Effect Transistor, 24A I(D), 1000V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN
IXYS
©2020 ICPDF网 联系我们和版权申明