IXFX24N90Q [IXYS]
HiPerFET Power MOSFETs Q-CLASS; HiPerFET功率MOSFET Q系列
| 型号： | IXFX24N90Q |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs Q-CLASS |
| 文件： | 总2页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
Q-CLASS
IXFK 24N90Q
IXFX 24N90Q
VDSS
ID25
=
=
900 V
24 A
RDS(on) = 0.45 W
Single MOSFET Die
trr £ 250 ns
N-ChannelEnhancementMode
AvalancheRated, LowQg,
High dV/dt, Low trr
PLUS247TM
Preliminary data sheet
(TAB)
G
Symbol
TestConditions
Maximum Ratings
D
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
900
900
V
V
TO-264AA(IXFK)
VGS
VGSM
Continuous
Transient
±20
±30
V
V
G
D
(TAB)
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
24
96
24
A
A
A
S
G = Gate
D = Drain
S = Source
TAB = Drain
EAR
EAS
TC = 25°C
TC = 25°C
60
2.5
mJ
J
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
Features
l IXYS advanced low Qg process
l Low gate charge and capacitances
- easier to drive
PD
TJ
TC = 25°C
500
W
-55 ... +150
°C
- faster switching
TJM
Tstg
150
-55 ... +150
°C
°C
l International standard packages
l Low RDS (on)
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
l Rated for unclamped Inductive load
switching (UIS)
Md
Mounting torque
TO-264
0.4/6
Nm/lb.in.
rated
Weight
PLUS 247
TO-264
6
10
g
g
l Molding epoxies meet UL 94 V-0
flammability classification
Applications
l
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
Symbol
TestConditions
Characteristic Values
l
(TJ = 25°C, unless otherwise specified)
l
min. typ. max.
power supplies
DC choppers
l AC motor control
VDSS
VGS = 0 V, ID = 250uA
900
2.5
V
l
VGS(th)
VDS = VGS, ID = 4mA
4.5 V
l
Temperature and lighting controls
IGSS
VGS = ±20 V, VDS = 0
±100 nA
Advantages
IDSS
VDS = VDSS
VGS = 0 V
100 mA
2 mA
l
PLUS 247TM package for clip or spring
TJ = 125°C
mounting
Space savings
l
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
0.45 W
l
High power density
© 2000 IXYS All rights reserved
98679B (08/00)
IXFK 24N90Q
IXFX 24N90Q
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
PLUS247TM Outline
VDS = 10 V; ID = 0.5 • ID25
Note 1
16
22
S
Ciss
Coss
Crss
5900
650
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
130
td(on)
tr
td(off)
tf
25
21
60
12
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 W (External),
Terminals: 1 - Gate
2 - Drain (Collector)
3-Source(Emitter)
4 - Drain (Collector)
Qg(on)
Qgs
170
38
nC
nC
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
Qgd
75
RthJC
RthCK
0.26 K/W
K/W
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
0.15
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
L
L1
5.45 BSC
19.81 20.32
.215 BSC
.780 .800
.150 .170
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
3.81
4.32
Symbol
TestConditions
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IS
VGS = 0 V
24
96
A
A
TO-264 AA Outline
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
1.5
V
trr
250 ns
IF = IS,-di/dt = 100 A/ms, VR = 100 V
QRM
IRM
1.4
9
mC
A
Millimeter
Dim.
Inches
Min.
Max.
Min.
Max.
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
c
D
E
e
0.53
25.91
19.81
0.83
26.16
19.96
.021
1.020
.780
.033
1.030
.786
5.46BSC
.215BSC
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
L
L1
20.32
2.29
20.83
2.59
.800
.090
.820
.102
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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