IXFX24N120Q2 [IXYS]
HiPerFET Power MOSFETs Q-Class; HiPerFET功率MOSFET Q系列
| 型号： | IXFX24N120Q2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs Q-Class |
| 文件： | 总2页 (文件大小：542K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Data
HiPerFETTM
IXFK 24N120Q2
IXFX 24N120Q2
VDSS = 1200 V
ID25 24 A
RDS(on) = 0.65 Ω
=
PowerMOSFETs
Q-Class
N-Channel Enhancement Mode
trr ≤ 300 ns
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
PreliminaryDataSheet
Symbol
TestConditions
Maximum Ratings
PLUS247TM (IXFX)
VDSS
VDGR
T
= 25°C to 150°C
1200
1200
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ
VGS
VGSM
Continuous
Transient
30
40
V
V
D (TAB)
ID25
IDM
IAR
T
= 25°C
24
96
12
A
A
A
TC = 25°C, pulse width limited by TJM
G
D
TCC = 25°C
EAR
EAS
T
= 25°C
30
4.0
mJ
J
TCC = 25°C
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
20
V/ns
TO-264 AA (IXF
PD
TC = 25°C
830
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G
D
S
D (TAB)
TL
1.6 mm (0.063 in) from case for 10 s
300
°C
G = Gate
S = Source
D = Drain
TAB = Drain
Md
Mountingtorque
TO-264
0.9/6 Nm/lb.in.
Weight
PLUS-247
TO-264
6
10
g
g
Features
z
Double metal process for low gate
resistance
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
Symbol
TestConditions
Characteristic Values
z
z
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8 mA
1200
2.5
V
V
z
z
VGS(th)
5.0
IGSS
IDSS
VGS = 30 VDC, VDS = 0
200 nA
Advantages
VDS = V
T = 25°C
TJJ = 125°C
50 µA
VGS = 0 DVSS
2
mA
z
Easy to mount
Space savings
z
RDS(on)
V
= 10 V, ID = 0.5 • I
0.65
Ω
PuGSlse test, t ≤ 300 µs,Dd2u5 ty cycle d ≤ 2 %
z
High power density
DS99185(05/04)
© 2004 IXYS All rights reserved
IXFK 24N120Q2
IXFX 24N120Q2
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
PLUS247TM Outline
VDS = 20 V; ID = 0.5 • ID25, pulse test
15
25
S
Ciss
Coss
Crss
8200
560
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
110
td(on)
tr
td(off)
tf
22
13
60
12
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Terminals: 1-Gate
RG = 1.0 Ω (External),
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
Millimeter
Inches
Qg(on)
Qgs
180
45
nC
nC
nC
Min. Max.
Min. Max.
A
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
A
A12
Qgd
80
b
1.14
1.91
2.92
1.40
2.13
3.12
b
RthJC
RthCK
0.15 K/W
K/W
b12
TO-264
0.15
C
D
E
0.61
0.80
20.80 21.34
15.75 16.13
e
5.45 BSC
.215 BSC
.780 .800
.150 .170
L
19.81 20.32
L1
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
TestConditions
min.
typ. max.
TO-264 AA Outline
VGS = 0 V
24
A
A
ISM
Repetitive; pulse width limited by TJM
96
VSD
IF = IS, VGS = 0 V,
1.5
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
300
ns
µC
A
QRM
IRM
1
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
10
Millimeter
Dim.
Inches
Min. Max.
Min.
Max.
A
4.82
2.54
2.00
5.13
2.89
2.10
.190
.202
.114
.083
A1
.100
A2
.079
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
c
D
E
e
0.53
25.91
19.81
0.83
26.16
19.96
.021
1.020
.780
.033
1.030
.786
5.46BSC
.215BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
L1
20.32
2.29
20.83
2.59
.800
.090
.820
.102
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
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ofthefollowingU.S.patents:
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