IXFH30N60P [IXYS]
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode; PolarHVTM HiPerFET功率MOSFET N沟道增强模式
| 型号： | IXFH30N60P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode |
| 文件： | 总5页 (文件大小：330K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHVTM HiPerFET
Power MOSFET
IXFH 30N60P
IXFT 30N60P
IXFV 30N60P
IXFV 30N60PS
VDSS = 600
ID25 = 30
V
A
RDS(on) ≤ 240 mΩ
≤ 200 ns
N-Channel Enhancement Mode
Fast Recovery Diode
trr
Avalanche Rated
PLUS220 (IXFV)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 150° C
600
600
V
G
TJ = 25° C to 150° C; RGS = 1 MΩ
V
D
S
D (TAB)
VGSS
VGSM
Continuous
Transient
30
40
V
V
PLUS220 SMD (IXFV...S)
ID25
IDM
TC =25° C
30
80
A
A
TC = 25° C, pulse width limited by TJM
G
IAR
TC =25° C
30
A
D (TAB)
S
EAR
EAS
TC =25° C
TC =25° C
50
mJ
J
1.5
TO-247 (IXFH)
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 4 Ω
,
20
V/ns
TC =25° C
500
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G
D (TAB)
D
S
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°C
°C
TO-268 (IXFT)
M
Mounting torque
Mounting force
(TO-247)
(PLUS220)
1.13/10 Nm/lb.in.
FCd
11..65/2.5..15
N/lb.
G
Weight
TO-247
TO-268
PLUS220
6
5
4
g
g
g
S
D (TAB)
G = Gate
D = Drain
TAB = Drain
S = Source
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = 30 V, VDS = 0
600
V
V
Features
2.5
5.0
l
Fast Recovery diode
Unclamped Inductive Switching (UIS)
rated
l
100
nA
l
l
IDSS
VDS = VDSS
VGS = 0 V
25
250
µA
µA
International standard packages
Low package inductance
- easy to drive and to protect
TJ = 125° C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
240 mΩ
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
DS99316E(03/06)
© 2006 IXYS All rights reserved
IXFH 30N60P IXFT 30N60P
IXFV 30N60P IXFV 30N60PS
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, pulse test
15
27
S
Ciss
Coss
Crss
4000
430
42
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
29
20
80
25
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 ID25
RG = 4 Ω (External)
Qg(on)
Qgs
82
28
28
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCS
0.25 ° C/W
° C/W
TO-247, PLUS220
0.21
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
Symbol
IS
Test Conditions
VGS = 0 V
Repetitive
30
80
A
ISM
A
V
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
IF = 25A, -di/dt = 100 A/µs
200
ns
QRM
VR = 100V, VGS = 0 V
0.8
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
6,534,343
6,583,505
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
IXFH 30N60P IXFT 30N60P
IXFV 30N60P IXFV 30N60PS
Fig. 1. Output Characteristics
@ 25
Fig. 2. Extended Output Characteristics
º
C
@ 25 C
º
30
27
24
21
18
15
12
9
60
55
50
45
40
35
30
25
20
15
10
5
V
= 10V
8V
V
= 10V
8V
GS
GS
7V
7V
6.5V
6V
6.5V
6V
5.5V
5V
6
5.5V
5V
3
0
0
0
0
0
1
2
3
4
5
6
7
8
0
3
6
9
12 15 18 21 24 27 30
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
Fig. 4. RDS(on Norm alized to ID = 15A
)
@ 125
º
C
Value vs. Junction Tem perature
30
27
24
21
18
15
12
9
3.4
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
V
= 10V
7V
GS
V
= 10V
GS
6V
5.5V
I
= 30A
D
I
= 15A
D
5V
6
3
0.7
0.4
4.5V
0
2
4
6
8
10
12
14
16
18
-50
-25
0
25
50
75
100 125 150
VD S - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
ID = 15A Value vs. Drain Current
Fig. 6. Drain Current vs. Case
Tem perature
3
2.8
2.6
2.4
2.2
2
35
30
25
20
15
10
5
V
= 10V
GS
T = 125 C
º
J
1.8
1.6
1.4
1.2
1
º
T = 25 C
J
0
0.8
-50
-25
0
25
50
75
100 125 150
5
10 15 20 25 30 35 40 45 50 55 60
I D - Amperes
TC - Degrees Centigrade
© 2006 IXYS All rights reserved
IXFH 30N60P IXFT 30N60P
IXFV 30N60P IXFV 30N60PS
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
T
J
= -40 C
º
25
125
º
C
º
C
T
J
= 125
º
C
C
C
25
º
º
-40
0
0
3.5
0.4
0
4
4.5
5
5.5
6
6.5
7
0
5
10
15
20
25
30
35
40
VG S - Volts
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
90
80
70
60
50
40
30
20
10
0
V
= 300V
DS
I
I
= 15A
D
G
= 10mA
T
= 125 C
º
J
T
J
= 25 C
º
0.5
0.6
0.7
0.8
0.9
1
1.1
0
10
20
30
40
50
60
70
80
90
VS D - Volts
Q G - nanoCoulombs
Fig. 12. Maxim um Transient Therm al
Resistance
Fig. 11. Capacitance
10000
1000
100
1.00
0.10
0.01
f = 1MHz
C
iss
C
C
oss
rss
20
10
0.1
1
10
100
1000
5
10
15
25
30
35
40
VD S - Volts
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSREF:T_30N60P(7J)12-05-05-B.xls
IXFH 30N60P IXFT 30N60P
IXFV 30N60P IXFV 30N60PS
Package Outline Drawings
TO-247 AD Outline
PLUS220 (IXFV) Outline
1
2
3
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
TO-268 (IXTT) Outline
PLUS220SMD (IXFV_S) Outline
© 2006 IXYS All rights reserved
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