IXFA36N30P3 [IXYS]
Power Field-Effect Transistor;
| 型号： | IXFA36N30P3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总5页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
Polar3 TM HiPerFETTM
Power MOSFET
VDSS = 300V
ID25 = 36A
RDS(on) 110m
IXFA36N30P3
IXFP36N30P3
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-263AA (IXFA)
G
S
Symbol
VDSS
Test Conditions
Maximum Ratings
D (Tab)
TJ = 25C to 150C
300
300
V
V
TO-220AB (IXFP)
VDGR
TJ = 25C to 150C, RGS = 1M
VGSS
VGSM
Continuous
Transient
20
30
V
V
ID25
IDM
TC = 25C
36
70
A
A
G
D
D (Tab)
TC = 25C, Pulse Width Limited by TJM
S
IA
TC = 25C
TC = 25C
18
1
A
J
G = Gate
S = Source
D
= Drain
EAS
Tab = Drain
dv/dt
PD
IS IDM, VDD VDSS, TJ 150C
TC = 25C
10
V/ns
W
347
TJ
-55 ... +150
150
C
C
C
Features
TJM
Tstg
-55 ... +150
International Standard Packages
Fast Intrinsic Rectifier
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
260
°C
°C
Md
Mounting Torque (TO-220)
1.13 / 10
Nm/lb.in
Weight
TO-263
TO-220
2.5
3.0
g
g
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VGS = 20V, VDS = 0V
VDS = VDSS, VGS = 0V
300
V
V
2.5
4.5
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
100 nA
IDSS
10 A
400 μA
TJ = 125C
Robotics and Servo Controls
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
110 m
DS100579A(9/14)
© 2014 IXYS CORPORATION, All Rights Reserved
IXFA36N30P3
IXFP36N30P3
Symbol
Test Conditions
Characteristic Values
TO-263 Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
17
28
S
RGi
2.1
Ciss
Coss
Crss
2040
355
6
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
1. Gate
2. Drain
3. Source
4. Drain
td(on)
tr
td(off)
tf
16
39
36
14
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10 (External)
Qg(on)
Qgs
30
10
8
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
0.36 C/W
C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
36
A
A
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
144
1.4
TO-220 Outline
V
trr
QRM
IRM
125
1.0
17
ns
IF = 18A, -di/dt = 200A/μs
μC
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Pins: 1 - Gate
3 - Source
2 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXFA36N30P3
IXFP36N30P3
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
36
32
28
24
20
16
12
8
80
70
60
50
40
30
20
10
0
V
= 10V
8V
GS
V
= 10V
GS
8V
7V
7V
6V
6V
5V
4
5V
0
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 18A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
36
32
28
24
20
16
12
8
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
V
= 10V
8V
GS
V
= 10V
GS
7V
6V
I
= 36A
D
I
= 18A
D
4
5V
0
0
1
2
3
4
5
6
7
8
9
10
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 18A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
4.6
4.2
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
40
35
30
25
20
15
10
5
V
= 10V
GS
T
J
= 125ºC
T = 25ºC
J
0
0
10
20
30
40
50
60
70
80
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
ID - Amperes
© 2014 IXYS CORPORATION, All Rights Reserved
IXFA36N30P3
IXFP36N30P3
Fig. 8. Transconductance
Fig. 7. Input Admittance
50
45
40
35
30
25
20
15
10
5
70
60
50
40
30
20
10
0
T
J
= - 40ºC
25ºC
125ºC
T
J
= 125ºC
25ºC
- 40ºC
0
0
10
20
30
40
50
60
70
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
120
100
80
60
40
20
0
10
9
8
7
6
5
4
3
2
1
0
V
= 300V
DS
I
I
= 18A
D
G
= 10mA
T
J
= 125ºC
T
J
= 25ºC
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
4
8
12
16
20
24
28
32
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
10,000
1,000
100
10
100
10
1
R
Limit
DS(on)
= 1 MHz
f
C
100µs
iss
C
oss
1ms
C
rss
T = 150ºC
J
10ms
T
C
= 25ºC
100ms
Single Pulse
DC
1
0.1
0
5
10
15
20
25
30
35
40
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA36N30P3
IXFP36N30P3
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2014 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_36N30P3 (W5) 9-09-14
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