GS150TI25104 [IXYS]
Gallium Arsenide Schottky Rectifier; 砷化镓肖特基整流器
| 型号： | GS150TI25104 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Gallium Arsenide Schottky Rectifier |
| 文件： | 总2页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GS150TA25104
GS150TI25104
Gallium Arsenide Schottky Rectifier
GS150TC25104
= 4 A
IDC
Isolated Surface Mount Package
Preliminary Data
VRRM = 250 V
CJunction = 9 pF
VRSM VRRM
Type
Part
Configuration
V
V
Number
Triple
250 250
250 250
250 250
GS150
GS150
GS150
TI25104
TC25104
TA25104
Independent
Triple
Common cathode
Triple
Common anode
C
A1
A2
A3
A1
A2
A3
A1
C
1
C
1
1
TRIPLE
COMMON
ANODE
(TA)
TRIPLE
COMMON
CATHODE
(TC)
TRIPLE
IND EPEN DEN T
(TI)
C
2
A2
A3
C
C
2
2
C
C
A = Anode, C = Cathode
3
3
C
3
Symbol
Conditions
Maximum Ratings
Features
●
IFAV
IFAV
TC = 25°C; DC
TC = 90°C; DC
04
A
Low forward voltage
●
3.5
A
Very high switching speed
Trr <15ns
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
10
A
●
Low junction capacity of GaAs
- low reverse current peak at turn off
TVJ
Tstg
-55...+175
-55...+150
°C
°C
●
Soft turn off
●
Temperature independent switching
Ptot
Isolation
Isolation
TC = 25°C (20W/device)
(Substrate to Case)
(Diode to Diode)
30
>2500
>600
W
V
V
behaviour
●
High temperature operation capability
●
Epoxy meets UL 94V-0
Applications
Symbol
IR ꢀ
VF
Conditions
Characteristic Values
●
MHz switched mode power supplies
typ.
max.
(SMPS)
●
High frequency converters
TVJ = 25°C VR = VRRM
TVJ = 125°C VR = VRRM
1.3
mA
mA
●
Resonant converters
1.3
IF = 2 A;
IF = 2 A;
TVJ = 125°C
TVJ = 25°C
1.3
1.2
V
V
1.5
CJ
VR = 100 V; TVJ = 125°C
9
pF
RthJC
Weight
5
2
K/W
g
Pulse test: ꢀ Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data per diode unless otherwise specified
IXYSRF reserves the right to change limits, conditions and dimensions.
© 2003 IXYSRF/Directed Energy, Inc.
IXYSRF/Directed Energy, Inc.
IXYS Semiconductor GmbH
2401 Research Blvd. Ste 108, Fort Collins, CO 80526
Phone: (970) 493-1901, Fax: 970-493-1903, www.directedenergy.com
Edisonstr. 15, D-68623 Lampertheim, Germany
Phone: +49-6206-503-0, Fax: +49-6206-503627
GS150TA25104
GS150TI25104
GS150TC25104
100
10
1
10.00
1.00
0.10
0.1
1
10
100
1000
0.00
0.50
1.00
1.50
2.00
REVERSE BIAS VOLTAGE INVOLTS
Volts
Fig. 1 Typical forward characteristics
Fig. 2 Typical junction capacity versus
blocking voltage
300
250
200
150
100
50
160
140
120
100
80
60
40
20
0
0
1.00E-06
1.00E-05
1.00E-04
1.00E-06
1.00E-05
1.00E-04
1.00E-03
1.00E-02
LEAKAGE CURRENT IN AMPERES
LEAKAGE CURRENT IN AMPERES
Fig. 3 Typical leakage current vs. voltage at 25C
Fig. 4 Typical leakage current vs. temperature at 100V
Reverse
Explanatory comparison of the basic operational behavior of rectifier diodes and Gallium Arsenide
Schottky diodes:
Rectifier Diode
By majority + minority carriers
GaAs Schottky Diode
By majority carriers only
Conduction
Forward characteristics VF (IF)
VF (IF), see Fig. 1
Turn off characteristics Extraction of excess carriers
causes temperature dependant
Reverse current charges
junction capacity CJ, see Fig. 2;
not temperature dependent
reverse recovery (trr, IRM, Qrr)
Turn on characteristics
Delayed saturation leads to VFR
No turn on overvoltage peak
Doc #9200-0261 Rev 1
© 2003 IXYSRF/Directed Energy, Inc.
IXYSRF/Directed Energy, Inc.
IXYS Semiconductor GmbH
2401 Research Blvd. Ste 108, Fort Collins, CO 80526
Phone: (970) 493-1901, Fax: 970-493-1903, www.directedenergy.com
Edisonstr. 15, D-68623 Lampertheim, Germany
Phone: +49-6206-503-0, Fax: +49-6206-503627
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