DSEI30 [IXYS]
Fast Recovery Epitaxial Diode (FRED); 快速恢复外延二极管（ FRED ）
| 型号： | DSEI30 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Fast Recovery Epitaxial Diode (FRED) |
| 文件： | 总2页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSEI 30 IFAVM = 37 A
VRRM = 600 V
Fast Recovery
Epitaxial Diode (FRED)
trr
= 35 ns
TO-247 AD
C
A
VRSM
V
VRRM
V
Type
C
A
640
600
DSEI 30-06A
C
A = Anode, C = Cathode
Symbol
IFRMS
Test Conditions
Maximum Ratings
Features
①
International standard package
JEDEC TO-247 AD
TVJ = TVJM
70
37
375
A
A
A
IFAVM
IFRM
①
TC = 85°C; rectangular, d = 0.5
tP < 10 ms; rep. rating, pulse width limited by TVJM
①
①
①
①
①
①
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
IFSM
TVJ = 45°C; t = 10 ms (50 Hz), sine
300
320
A
A
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
260
280
A
A
t = 8.3 ms (60 Hz), sine
I2t
TVJ = 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
450
420
A2s
A2s
Applications
TVJ = 150°C; t = 10 ms (50 Hz), sine
340
320
A2s
A2s
t = 8.3 ms (60 Hz), sine
①
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
TVJ
TVJM
Tstg
-40...+150
150
-40...+150
°C
°C
°C
①
①
①
Ptot
Md
TC = 25°C
125
0.8...1.2
6
W
Nm
g
①
Mounting torque
Weight
Symbol
IR
①
①
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
①
Test Conditions
Characteristic Values
max.
typ.
Advantages
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C VR = 0.8 • VRRM
VR = VRRM
VR = 0.8 • VRRM
100
50
7
mA
mA
mA
①
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
①
VF
IF = 37 A;
TVJ = 150°C
TVJ = 25°C
1.4
1.6
V
V
①
①
VT0
rT
For power-loss calculations only
TVJ = TVJM
1.01
7.1
V
mW
①
RthJC
RthCK
RthJA
1
K/W
K/W
K/W
0.25
35
50
11
trr
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C
35
10
ns
A
IRM
VR = 350 V; IF = 30 A; -diF/dt = 240 A/ms
L £ 0.05 mH; TVJ = 100°C
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1 - 2
DSEI 30, 600 V
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus
-diF/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage
versus diF/dt.
Dim.
Millimeter
Min. Max. Min.
Inches
Max.
Dimensions
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
J
1.0
1.4 0.040 0.055
K
10.8 11.0 0.426 0.433
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
N
2.2 2.54 0.087 0.102
Fig. 7 Transient thermal impedance junction to case.
© 2000 IXYS All rights reserved
2 - 2
相关型号：
DSEI30-06AS
Rectifier Diode, 1 Phase, 1 Element, 37A, 600V V(RRM), Silicon, TO-247AD, TO-247AD, 2 PIN
IXYS
DSEI30-10A
Rectifier Diode, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon, TO-247AD, TO-247AD, 2 PIN
LITTELFUSE
DSEI30-10AR
Rectifier Diode, 1 Phase, 1 Element, 30A, 1000V V(RRM), Silicon, ISOPLUS247, 2 PIN
LITTELFUSE
DSEI30-12A
Rectifier Diode, 1 Phase, 1 Element, 26A, 1200V V(RRM), Silicon, TO-247AD, TO-247AD, 2 PIN
LITTELFUSE
DSEI35-06AS
Rectifier Diode, 1 Phase, 1 Element, 35A, 600V V(RRM), Silicon, TO-263AB, TO-263AB, 3 PIN
IXYS
©2020 ICPDF网 联系我们和版权申明